A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398180

S. Voinigescu, T. Dickson, R. Beerkens, I. Khalid, P. Westergaard

引用次数: 58

Abstract

The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe BiCMOS, and InP-HBT 30-80 Gb/s high-speed circuit in production 130-nm SiGe BiCMOS and InP HBT technologies are compared.

查看原文本刊更多论文

用于高速和毫米波集成电路的Si CMOS、SiGe BiCMOS和InP HBT技术的比较

本文概述了用于宽带和调谐毫米波应用的Si MOSFET, SiGe HBT和InP HBT器件和电路性能。比较了仅cmos、仅SiGe-HBT、SiGe BiCMOS、InP-HBT 30- 80gb /s高速电路在130纳米SiGe BiCMOS和InP HBT生产中的实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

自引率

0.00%

发文量