{"title":"24和36 GHz SiGe HBT功率放大器","authors":"S. Chartier, E. Sonmez, H. Schumacher","doi":"10.1109/SMIC.2004.1398215","DOIUrl":null,"url":null,"abstract":"We present two amplifiers using the SiGe HBT technology, operating at 24 GHz and 36 GHz, respectively. The first amplifier was designed to operate in the 24 GHz ISM band, especially for traffic and automotive applications. In the next step, this amplifier was improved to reach higher frequencies. Both amplifiers show a gain higher than 20 dB, a good matching as well as a high output linearity.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"24 and 36 GHz SiGe HBT power amplifiers\",\"authors\":\"S. Chartier, E. Sonmez, H. Schumacher\",\"doi\":\"10.1109/SMIC.2004.1398215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present two amplifiers using the SiGe HBT technology, operating at 24 GHz and 36 GHz, respectively. The first amplifier was designed to operate in the 24 GHz ISM band, especially for traffic and automotive applications. In the next step, this amplifier was improved to reach higher frequencies. Both amplifiers show a gain higher than 20 dB, a good matching as well as a high output linearity.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398215\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We present two amplifiers using the SiGe HBT technology, operating at 24 GHz and 36 GHz, respectively. The first amplifier was designed to operate in the 24 GHz ISM band, especially for traffic and automotive applications. In the next step, this amplifier was improved to reach higher frequencies. Both amplifiers show a gain higher than 20 dB, a good matching as well as a high output linearity.