8.5 GHz基于SiGe的放大器，采用全自对准双台面SiGe hbt

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398232

Kok-Yan Lee, B. Johnson, S. Mohammadi, P. Bhattacharya, L. Katehi, G. Ponchak

{"title":"8.5 GHz基于SiGe的放大器，采用全自对准双台面SiGe hbt","authors":"Kok-Yan Lee, B. Johnson, S. Mohammadi, P. Bhattacharya, L. Katehi, G. Ponchak","doi":"10.1109/SMIC.2004.1398232","DOIUrl":null,"url":null,"abstract":"We report an 8.5 GHz fully integrated SiGe amplifier developed using a novel fully self-aligned double mesa HBT process technology. The common-base HBT demonstrates a G/sub max/ > 14 dB and an f/sub max/ > 37 GHz. At 8.5 GHz, the small-signal gain of the amplifier is better than 4 dB, with input and output return loss of -10 dB and -5 dB, respectively. The amplifier is also shown to be unconditionally stable.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs\",\"authors\":\"Kok-Yan Lee, B. Johnson, S. Mohammadi, P. Bhattacharya, L. Katehi, G. Ponchak\",\"doi\":\"10.1109/SMIC.2004.1398232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an 8.5 GHz fully integrated SiGe amplifier developed using a novel fully self-aligned double mesa HBT process technology. The common-base HBT demonstrates a G/sub max/ > 14 dB and an f/sub max/ > 37 GHz. At 8.5 GHz, the small-signal gain of the amplifier is better than 4 dB, with input and output return loss of -10 dB and -5 dB, respectively. The amplifier is also shown to be unconditionally stable.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398232\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398232","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了一种采用新颖的全自对准双台面HBT工艺技术开发的8.5 GHz全集成SiGe放大器。共基HBT的G/sub max/ > 14 dB, f/sub max/ > 37 GHz。在8.5 GHz时，放大器的小信号增益优于4 dB，输入和输出回波损耗分别为-10 dB和-5 dB。放大器也被证明是无条件稳定的。

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An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs

We report an 8.5 GHz fully integrated SiGe amplifier developed using a novel fully self-aligned double mesa HBT process technology. The common-base HBT demonstrates a G/sub max/ > 14 dB and an f/sub max/ > 37 GHz. At 8.5 GHz, the small-signal gain of the amplifier is better than 4 dB, with input and output return loss of -10 dB and -5 dB, respectively. The amplifier is also shown to be unconditionally stable.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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