1- 6ghz单片上变频混频器，输入/输出有源平衡采用SiGe HBT工艺

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398156

Sang-Heung Lee, H. Bae, Seung-Yun Lee, Jongdae Kim, Bo Woo Kim, Jin-Yeong Kang

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引用次数: 6

摘要

本文采用0.8 /spl mu/m SiGe HBT工艺技术，设计并制作了用于射频发射机的1-6 GHz MMIC上转换混频器。该混频器采用本路/射频宽带匹配电路、本路/中频输入平衡电路和射频输出平衡电路在片上实现。测量结果表明，该混频器的功率转换增益为1 ~ 6 GHz，带宽为4.5 GHz，本端隔离(本端中频隔离和本端射频隔离)在27 ~ 45 dB之间，OIP3在-2 dBm ~ -12 dBm之间，3.0 V电源电压下电流消耗为29 mA。所制混频器的切屑尺寸为2.7 mm/spl倍/1.6 mm。

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A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process

In this paper, a 1-6 GHz MMIC up-conversion mixer, for an RF transmitter, is designed and fabricated using 0.8 /spl mu/m SiGe HBT process technology. This mixer is implemented on-chip using LO/RF wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated mixer show positive power conversion gain from 1 GHz to 6 GHz, bandwidth of 4.5 GHz, LO isolation (LO to IF isolation and LO to RF isolation) between 27 dB and 45 dB, OIP3 between -2 dBm and -12 dBm, current consumption of 29 mA for 3.0 V supply voltage. The chip size of the fabricated mixer is 2.7 mm/spl times/1.6 mm.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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