采用重分布层的高q可变电感用于Si射频电路

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398199

H. Sugawara, H. Ito, K. Okada, K. Itoi, M. Sato, H. Abe, T. Ito, K. Masu

{"title":"采用重分布层的高q可变电感用于Si射频电路","authors":"H. Sugawara, H. Ito, K. Okada, K. Itoi, M. Sato, H. Abe, T. Ito, K. Masu","doi":"10.1109/SMIC.2004.1398199","DOIUrl":null,"url":null,"abstract":"We present a high-Q variable inductor using redistributed layers, whose inductance is of nH-order for GHz applications. The inductance can be varied by shielding the magnetic flux by means of a metal plate above the inductor. The metal plate is moved using a MEMS actuator. At 2 GHz, the measured inductance is varied from 4.80 nH to 2.27 nH, i.e., the variable range is 52.6%. The maximum value of quality factor is 50.1.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"295 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"High-Q variable inductor using redistributed layers for Si RF circuits\",\"authors\":\"H. Sugawara, H. Ito, K. Okada, K. Itoi, M. Sato, H. Abe, T. Ito, K. Masu\",\"doi\":\"10.1109/SMIC.2004.1398199\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a high-Q variable inductor using redistributed layers, whose inductance is of nH-order for GHz applications. The inductance can be varied by shielding the magnetic flux by means of a metal plate above the inductor. The metal plate is moved using a MEMS actuator. At 2 GHz, the measured inductance is varied from 4.80 nH to 2.27 nH, i.e., the variable range is 52.6%. The maximum value of quality factor is 50.1.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"295 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398199\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

我们提出了一种采用重分布层的高q可变电感器，其电感值为nh阶，适用于GHz应用。电感可以通过在电感器上方的金属板屏蔽磁通量来改变。使用MEMS致动器移动金属板。在2 GHz时，测量到的电感从4.80 nH变化到2.27 nH，即变化范围为52.6%。质量因子的最大值为50.1。

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High-Q variable inductor using redistributed layers for Si RF circuits

We present a high-Q variable inductor using redistributed layers, whose inductance is of nH-order for GHz applications. The inductance can be varied by shielding the magnetic flux by means of a metal plate above the inductor. The metal plate is moved using a MEMS actuator. At 2 GHz, the measured inductance is varied from 4.80 nH to 2.27 nH, i.e., the variable range is 52.6%. The maximum value of quality factor is 50.1.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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