Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)最新文献_第2页

Inline monitoring of multi-level dual inlaid copper interconnect technologies 多层双嵌套铜互连技术的在线监测

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854338

V. Kolagunta, B. Smith, R. Islam, M. Angyal, J. Mendonca, S. Bartaszewicz, N. Duraiswami, P. Jana, S. Veeraraghavan, S. Venkatesan

引用次数: 2

Simple, reliable Cu/low-k interconnect integration using mechanically-strong low-k dielectric material: silicon-oxycarbide 简单，可靠的铜/低k互连集成使用机械强低k介电材料:碳化硅氧

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854331

T. Furusawa, N. Sakuma, D. Ryuzaki, S. Kondo, K. Takeda, Syuntaro Machida, K. Hinode

引用次数: 4

Multi-I/O and reconfigurable RF/wireless interconnect based on near field capacitive coupling and multiple access techniques 基于近场电容耦合和多址技术的多i /O和可重构射频/无线互连

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854269

M. F. Chang, V. Roychowdhury, L. Y. Zhang, S. Zhou, Z.Y. Wang, Y.C. Wu, P. Ma, C.S. Lin, Z.J. Kang

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引用次数: 10

Half-conductive coupling interconnection technology for digital transmission between CMOS chips CMOS芯片间数字传输的半导电耦合互连技术

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854333

W. Pan, F. Devisch, C. De Tandt, R. Vounckx, M. Kuijk

引用次数: 4

Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films 电镀Cu薄膜自退火与热退火过程中应力与织构演化的关系

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854298

Haebum Lee, S. Lopatin, S. Wong

引用次数: 117

Tungsten via poisoning caused by water trapped in embedded organic low-K dielectrics 嵌入有机低钾电介质中的水引起的钨经中毒

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854311

K. Ikeda, T. Hasegawa, K. Tokunaga, M. Fukasawa, H. Kito, T. Miyamoto, S. Kadomura

引用次数: 0

Trench and via filling profile simulations for copper electroplating process 通过沟槽和填充剖面模拟镀铜过程

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854273

K. Kobayashi, A. Sano, H. Akahoshi, T. Itabashi, T. Haba, S. Fukada, H. Miyazaki

引用次数: 6

Characterization and integration of porous extra low-k (XLK) dielectrics 多孔特低钾(XLK)介电材料的表征与集成

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854294

C. Jin, J. Wetzel

引用次数: 5

Dual damascene architectures evaluation for the 0.18 /spl mu/m technology and below 0.18 /spl mu/m及以下技术的双大马士革架构评估

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854344

C. Verove, B. Descouts, P. Gayet, M. Guillermet, E. Sabouret, E. Spinelli, E. van der Vegt

引用次数: 6

0.42 /spl mu/m contacted pitch dual damascene copper interconnect for 0.15 /spl mu/m EDRAM using tapered via aligned to trench 0.42 /spl mu/m接触节距双damascene铜互连0.15 /spl mu/m EDRAM，使用与沟槽对齐的锥形孔

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854310

T. Hattori, H. Masuda, H. Sato, T. Matsuda, A. Yamamoto, Y. Kato, S. Ogawa, A. Ohsaki, T. Ueda

引用次数: 1