发布求助
文献互助 智能选刊 最新文献

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)最新文献

筛选
英文 中文
Electrical reliability issues of integrating low-K dielectrics with Cu metallization 集成低钾电介质与铜金属化的电气可靠性问题
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI: 10.1109/IITC.2000.854289
Z. Wu, Z.W. Shiung, C.C. Wang, K. Fang, R. G. Wu, Y.L. Liu, B. Tsui, M. Chen, W. Chang, P. Chou, S. Jang, C. Yu, M. Liang
{"title":"Electrical reliability issues of integrating low-K dielectrics with Cu metallization","authors":"Z. Wu, Z.W. Shiung, C.C. Wang, K. Fang, R. G. Wu, Y.L. Liu, B. Tsui, M. Chen, W. Chang, P. Chou, S. Jang, C. Yu, M. Liang","doi":"10.1109/IITC.2000.854289","DOIUrl":"https://doi.org/10.1109/IITC.2000.854289","url":null,"abstract":"Electrical reliability issues of two organic aromatic low-K materials (K 2.6/spl sim/2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114907828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration 纳米尺度弹性成像:一种新的低k介电积分测量工具
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI: 10.1109/IITC.2000.854293
G. Shekhawat, O. Kolosov, G. Briggs, E. Shaffer, S.J. Martin, R. Geer
{"title":"Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration","authors":"G. Shekhawat, O. Kolosov, G. Briggs, E. Shaffer, S.J. Martin, R. Geer","doi":"10.1109/IITC.2000.854293","DOIUrl":"https://doi.org/10.1109/IITC.2000.854293","url":null,"abstract":"A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution /spl les/10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131818845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films 银倍半氧烷基超低k介电薄膜的物理和电学特性
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI: 10.1109/IITC.2000.854292
R. Donaton, F. Iacopi, R. Baklanov, D. Shamiryan, B. Coenegrachts, H. Struyf, M. Lepage, M. Meuris, M. Van Hove, W. D. Gray, H. Meynen, D. de Roest, S. Vanhaelemeersch, K. Maex
{"title":"Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films","authors":"R. Donaton, F. Iacopi, R. Baklanov, D. Shamiryan, B. Coenegrachts, H. Struyf, M. Lepage, M. Meuris, M. Van Hove, W. D. Gray, H. Meynen, D. de Roest, S. Vanhaelemeersch, K. Maex","doi":"10.1109/IITC.2000.854292","DOIUrl":"https://doi.org/10.1109/IITC.2000.854292","url":null,"abstract":"Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It is shown that exposure of the films to plasma environments results in a change of porosity. A low-K dielectric film with a pore size around 3.5 nm is successfully integrated in 0.2 /spl mu/m single damascene structures.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133677756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
New method to study unlanded via architecture. Application to advanced interconnects: Al with low k and copper dual damascene 通过建筑学研究未登陆地区的新方法。应用于高级互连:低k铝和铜双大马士革
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI: 10.1109/IITC.2000.854286
P. Gayet, C. Lair, E. van den Vegt
{"title":"New method to study unlanded via architecture. Application to advanced interconnects: Al with low k and copper dual damascene","authors":"P. Gayet, C. Lair, E. van den Vegt","doi":"10.1109/IITC.2000.854286","DOIUrl":"https://doi.org/10.1109/IITC.2000.854286","url":null,"abstract":"This paper describes a new test structure developed to study unlanded vias. The limitation of conventional chains to characterize vias is shown. The new structures enabled us to improve product yield in a 0.18 /spl mu/m technology using HSQ and aluminum interconnects. Finally, it is emphasized that it is very useful to compare different copper dual damascene architectures.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132217507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An optimized integration scheme for 0.13 /spl mu/m technology node dual-damascene Cu interconnect 0.13 /spl mu/m技术节点双大马士革铜互连的优化集成方案
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI: 10.1109/IITC.2000.854346
Shyue-Shyh Lin, Chih-Wei Chen, Shien-Ming Huang, T. Kang, C. Yeh, Tsyr-Lih Li, B. Tsui, C. Hsia
{"title":"An optimized integration scheme for 0.13 /spl mu/m technology node dual-damascene Cu interconnect","authors":"Shyue-Shyh Lin, Chih-Wei Chen, Shien-Ming Huang, T. Kang, C. Yeh, Tsyr-Lih Li, B. Tsui, C. Hsia","doi":"10.1109/IITC.2000.854346","DOIUrl":"https://doi.org/10.1109/IITC.2000.854346","url":null,"abstract":"From electrical simulations, the best performance dual damascene Cu/FSG integration scheme has been defined to be via first without etching stop layer and with thinnest possible sealing nitride layer. To realize this process, 0.16 /spl mu/m and 0.27 /spl mu/m (local and global interconnect) borderless via chains (100 K) with minimum 0.36 /spl mu/m pitched metal lines (10 cm) were used as test vehicles. Sacrificial layer filled process was then defined with its process window carefully studied. From good electrical results with clearly defined process window, it is concluded that the proposed integration scheme is suitable for sub-0.13 /spl mu/m technology node applications.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122337979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A grain size limitation inherent to electroplated copper films 电镀铜薄膜固有的晶粒尺寸限制
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI: 10.1109/IITC.2000.854272
S. Brongersma, E. Richard, I. Vervoort, K. Maex
{"title":"A grain size limitation inherent to electroplated copper films","authors":"S. Brongersma, E. Richard, I. Vervoort, K. Maex","doi":"10.1109/IITC.2000.854272","DOIUrl":"https://doi.org/10.1109/IITC.2000.854272","url":null,"abstract":"A study of changes in the Avrami exponent a during secondary grain growth in thin electroplated Copper layers shows an almost linear change between 1 and 3 as the thickness of the layer increases from 0.55 to 1.5 /spl mu/m, followed by a stabilization around /spl alpha/=3 for thicker films. The occurrence of values below /spl alpha/=2 for a process that should be two dimensional at least, can only be understood in terms of a model where the nucleated secondary grains can never grow beyond a pre-determined final grain size. Using this model, the complete experimentally obtained dependence can be quantitatively reproduced in numerical calculations, indicating that there exists a size limitation for secondary grains that is inherent to the use of modern electroplating baths.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128079073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Irregular growth of PECVD-Ti silicide film on doped Si substrates 掺硅衬底上PECVD-Ti硅化膜的不规则生长
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI: 10.1109/IITC.2000.854283
K. Tai, Yusuke Harada, M. Matsumoto, H. Oki
{"title":"Irregular growth of PECVD-Ti silicide film on doped Si substrates","authors":"K. Tai, Yusuke Harada, M. Matsumoto, H. Oki","doi":"10.1109/IITC.2000.854283","DOIUrl":"https://doi.org/10.1109/IITC.2000.854283","url":null,"abstract":"Adhesion, cohesive strength, modulus, and hardness of the porous silica ILD film via organic/inorganic hybrid (ALCAP-S) with various kinds of film thickness were investigated and the preliminary attempt was made to correlate the above properties with abrasion compatibility as a function of film thickness. The Stud-pull strength is drastically affected by the visco-elastic behavior of the film and necessary for correction. The corrected adhesion and cohesive strength of ALCAP-S (k=2.2) are satisfactorily high. With decreasing the film thickness, the depth-dependency of modulus induced by the substrate becomes more significant and the corresponding film is liable to abrasion. On the contrary, with increasing thickness the dependency ceases and the film appears to be more elastic, leading to lower abrasion compatibility.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128211978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信