电镀铜薄膜固有的晶粒尺寸限制

S. Brongersma, E. Richard, I. Vervoort, K. Maex
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引用次数: 2

摘要

对电镀铜薄层二次晶粒生长过程中Avrami指数A变化的研究表明,随着层厚度从0.55增加到1.5 /spl μ m, Avrami指数A在1和3之间几乎呈线性变化,随后在/spl α /=3附近趋于稳定。对于一个至少应该是二维的过程,出现低于/spl α /=2的值,只能根据一个模型来理解,在这个模型中,成核的次级晶粒永远不能超过预定的最终晶粒尺寸。利用该模型,可以在数值计算中定量地再现实验中获得的完全依赖性,这表明现代电镀槽的使用固有地存在二次晶粒的尺寸限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A grain size limitation inherent to electroplated copper films
A study of changes in the Avrami exponent a during secondary grain growth in thin electroplated Copper layers shows an almost linear change between 1 and 3 as the thickness of the layer increases from 0.55 to 1.5 /spl mu/m, followed by a stabilization around /spl alpha/=3 for thicker films. The occurrence of values below /spl alpha/=2 for a process that should be two dimensional at least, can only be understood in terms of a model where the nucleated secondary grains can never grow beyond a pre-determined final grain size. Using this model, the complete experimentally obtained dependence can be quantitatively reproduced in numerical calculations, indicating that there exists a size limitation for secondary grains that is inherent to the use of modern electroplating baths.
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