Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)最新文献

The effects of substrate resistivity on RF component and circuit performance 衬底电阻率对射频元件和电路性能的影响

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-07 DOI: 10.1109/IITC.2000.854313

B. Floyd, C. Hung, K. O

引用次数: 19

New interconnect structure design methodology by Layout-design-based Interconnect Structure Optimization System (LADINOS) 基于布图设计的互连结构优化系统(LADINOS)的互连结构设计新方法

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-07 DOI: 10.1109/IITC.2000.854266

S. Kobayashi, M. Edahiro, Y. Hayashi

引用次数: 2

Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications 先进互连应用中HDP CVD与PECVD氮化硅的比较

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-07 DOI: 10.1109/IITC.2000.854287

J. Yota, M. Janani, L. Camilletti, A. Kar-Roy, Q.Z. Liu, C. Nguyen, M. D. Woo, J. Hander, P. van Cleemput, W. Chang, W. Chiou, L.J. Li, L. Chao, S. Jang, C. Yu, M. Liang

引用次数: 8

Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: a new extrapolation methodology for reliability estimate 亚微米触点和通孔的电迁移失效分布的蒙特卡罗模拟:可靠性估计的一种新的外推方法

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854327

J. Huang, A. Oates

引用次数: 9

Complete-abrasive-free process for copper damascene interconnection 铜-大马士革互连的完全无磨料工艺

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854340

S. Kondo, N. Sakuma, Y. Homma, Y. Goto, N. Ohashi, H. Yamaguchi, N. Owada

引用次数: 16

Single mask metal-insulator-metal (MIM) capacitor with copper damascene metallization for sub-0.18 /spl mu/m mixed mode signal and system-on-a-chip (SoC) applications 单掩模金属-绝缘体-金属(MIM)电容器，铜damascene金属化，用于低于0.18 /spl mu/m的混合模式信号和片上系统(SoC)应用

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854297

Ruichen Liu, Cheng-Yih Lin, E. Harris, S. Merchant, S. Downey, G. Weber, N. A. Ciampa, W. Tai, W. Lai, M. Morris, J. Bower, J. Miner, J. Frackoviak, W. Mansfield, D. Barr, R. Keller, Chong-Ping Chang, C. Pai, S. Rogers, R. Gregor

引用次数: 16

A three-dimensional stochastic wire-length distribution for variable separation of strata 变地层分离的三维随机线长分布

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854301

J. Joyner, P. Zarkesh-Ha, J.A. Davis, J. Meindl

引用次数: 53

Copper-SiOC-AirGap integration in a double level metal interconnect 铜- sioc - airgap集成在双级金属互连中

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854347

O. Demolliens, Y. Morand, M. Fayolle, M. Cochet, M. Assous, H. Feldis, D. Lonis, J. Royer, Y. Gobil, G. Passemard, P. Maury, F. Jourdan, M. Cordeau, T. Morel, L. Perroud, L. Ulmer, J.F. Lugard, D. Renaud

引用次数: 3

When should on-chip inductance modeling become necessary for VLSI timing analysis?

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854315

Li-Fu Chang, Keh-Jeng Chang, R. Mathews

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引用次数: 2

Study on adhesion properties of low dielectric constant films by stud pull test and modified edge lift-off test 低介电常数薄膜的粘接性能研究

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI: 10.1109/IITC.2000.854280

Junglong Song, C. Ryu, Heongsoo Kim, Sibum Kim, Chung-Tae Kim, J. Hwang

引用次数: 1