{"title":"亚微米触点和通孔的电迁移失效分布的蒙特卡罗模拟:可靠性估计的一种新的外推方法","authors":"J. Huang, A. Oates","doi":"10.1109/IITC.2000.854327","DOIUrl":null,"url":null,"abstract":"We have studied the electromigration failure distributions as a function of current density, and we show experimentally that the forms deviate from lognormal distributions as j approaches critical current density. The form change in failure distributions can be well described by Monte-Carlo simulation based on our physical electromigration failure model. The model predicts that median time to fail (MTF) and failure time dispersion (/spl sigma/) approach infinity as j/spl rarr/j/sub c/, and we show that this behavior results from a change in the functional form of failure with current density as j/spl rarr/j/sub c/. We propose a new methodology for the extrapolation of contact and via electromigration data to account for the change in the form of the failure distribution.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"35 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: a new extrapolation methodology for reliability estimate\",\"authors\":\"J. Huang, A. Oates\",\"doi\":\"10.1109/IITC.2000.854327\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied the electromigration failure distributions as a function of current density, and we show experimentally that the forms deviate from lognormal distributions as j approaches critical current density. The form change in failure distributions can be well described by Monte-Carlo simulation based on our physical electromigration failure model. The model predicts that median time to fail (MTF) and failure time dispersion (/spl sigma/) approach infinity as j/spl rarr/j/sub c/, and we show that this behavior results from a change in the functional form of failure with current density as j/spl rarr/j/sub c/. We propose a new methodology for the extrapolation of contact and via electromigration data to account for the change in the form of the failure distribution.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"35 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854327\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: a new extrapolation methodology for reliability estimate
We have studied the electromigration failure distributions as a function of current density, and we show experimentally that the forms deviate from lognormal distributions as j approaches critical current density. The form change in failure distributions can be well described by Monte-Carlo simulation based on our physical electromigration failure model. The model predicts that median time to fail (MTF) and failure time dispersion (/spl sigma/) approach infinity as j/spl rarr/j/sub c/, and we show that this behavior results from a change in the functional form of failure with current density as j/spl rarr/j/sub c/. We propose a new methodology for the extrapolation of contact and via electromigration data to account for the change in the form of the failure distribution.