亚微米触点和通孔的电迁移失效分布的蒙特卡罗模拟:可靠性估计的一种新的外推方法

J. Huang, A. Oates
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引用次数: 9

摘要

我们研究了电迁移失效分布作为电流密度的函数,并通过实验表明,当j接近临界电流密度时,形式偏离对数正态分布。基于物理电迁移失效模型的蒙特卡罗模拟可以很好地描述失效分布的形式变化。该模型预测中位失效时间(MTF)和失效时间色散(/spl sigma/)趋近于无穷大为j/spl rarr/j/sub c/,并且我们表明这种行为是由于电流密度为j/spl rarr/j/sub c/时失效函数形式的变化。我们提出了一种新的接触外推方法,并通过电迁移数据来解释失效分布形式的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: a new extrapolation methodology for reliability estimate
We have studied the electromigration failure distributions as a function of current density, and we show experimentally that the forms deviate from lognormal distributions as j approaches critical current density. The form change in failure distributions can be well described by Monte-Carlo simulation based on our physical electromigration failure model. The model predicts that median time to fail (MTF) and failure time dispersion (/spl sigma/) approach infinity as j/spl rarr/j/sub c/, and we show that this behavior results from a change in the functional form of failure with current density as j/spl rarr/j/sub c/. We propose a new methodology for the extrapolation of contact and via electromigration data to account for the change in the form of the failure distribution.
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