铜-大马士革互连的完全无磨料工艺

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854340

S. Kondo, N. Sakuma, Y. Homma, Y. Goto, N. Ohashi, H. Yamaguchi, N. Owada

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引用次数: 16

摘要

开发了铜(Cu)大马士革互连的完全无磨料工艺。该工艺结合了新开发的铜的无磨料化学抛光(AFP)和屏障金属层的干蚀刻。采用新型抛光剂和聚氨酯抛光垫，实现了铜抛光的完全停障特性。这种组合产生了非常干净、无划痕、防腐的抛光表面，即使经过100%的过度抛光，侵蚀和盘子的总深度也减少到传统浆料的五分之一以下。结果表明，开发出的AFP能显著降低铜线电阻及其偏差。

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Complete-abrasive-free process for copper damascene interconnection

Complete-abrasive-free process for copper (Cu) damascene interconnection has been developed. The process is a combination of a newly developed abrasive-free chemical polishing (AFP) of Cu and dry etching of a barrier metal layer. Complete stop-on-barrier characteristics of Cu polishing are attained by using the new polishing agent and a polyurethane polishing pad. This combination produces a very clean, scratch-free, anticorrosive polished surface, and the total depth of erosion and dishing is reduced to less than one fifth of that produced by conventional slurries even after 100% over polishing. And it is shown that the developed AFP significantly reduces both Cu line resistance and its deviation.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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