低介电常数薄膜的粘接性能研究

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854280

Junglong Song, C. Ryu, Heongsoo Kim, Sibum Kim, Chung-Tae Kim, J. Hwang

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引用次数: 1

摘要

采用螺柱拉拔试验和改进的边缘剥离试验(m-ELT)研究了低k薄膜与硬掩膜或底层的附着力。通过在常规PECVD氧化硬膜下沉积富硅氧化层，提高了蚕丝与硬膜的附着力。富硅氧化层的增强可归因于硬掩膜表面悬浮键的增加。通过430℃及以上的退火和400℃的5次退火，降低了丝绸与氧化物底层的附着力。在丝绸薄膜和低k CVD薄膜中均显示了螺柱拉拔试验与m-ELT之间良好的相关性。

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Study on adhesion properties of low dielectric constant films by stud pull test and modified edge lift-off test

Adhesion of low-k films to hardmask or underlayer were studied using stud pull test and modified edge lift off test (m-ELT). The adhesion of SiLK to hardmask was enhanced by depositing thin silicon rich oxide layer under conventional PECVD oxide hard mask. The enhancement of adhesion by the Si-rich oxide layer could be attributed to the increase of dangling bonds on the hardmask surface. Adhesion of SiLK to oxide underlayer was degraded by post-anneal at 430/spl deg/C and the above and 5-cycle annealing at 400/spl deg/C. The good correlation between stud pull test and m-ELT was shown in both SiLK and low-k CVD films.

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来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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