先进互连应用中HDP CVD与PECVD氮化硅的比较

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-07 DOI:10.1109/IITC.2000.854287

J. Yota, M. Janani, L. Camilletti, A. Kar-Roy, Q.Z. Liu, C. Nguyen, M. D. Woo, J. Hander, P. van Cleemput, W. Chang, W. Chiou, L.J. Li, L. Chao, S. Jang, C. Yu, M. Liang

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引用次数: 8

摘要

高密度等离子体CVD (HDP CVD)氮化硅已被研究用于先进的互连应用。结果表明，HDP薄膜具有许多优良的薄膜性能，与等离子体增强CVD (PECVD)氮化硅薄膜相比具有许多优点。与PECVD膜相比，HDP膜具有更高的膜密度，更低的氢含量，以及更低的抛光、湿蚀和干蚀速率。因此，HDP氮化硅是适合和理想的CMP和蚀刻停止层，作为硬掩膜，并作为铜扩散和氧化屏障在大马士革的架构。

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Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications

High-density plasma CVD (HDP CVD) silicon nitride has been investigated for its use in advanced interconnect applications. Results show that the HDP film has many excellent film properties and has many advantages over the plasma-enhanced CVD (PECVD) silicon nitride film. The HDP film has a higher film density, much lower hydrogen content, in addition to lower polish, wet-etch, and dry-etch rates, than the PECVD film. Therefore, the HDP silicon nitride is suitable and ideal as CMP and etch stop layers, as hard mask, and as Copper diffusion and oxidation barriers in damascene architectures.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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