Copper-SiOC-AirGap integration in a double level metal interconnect

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854347

O. Demolliens, Y. Morand, M. Fayolle, M. Cochet, M. Assous, H. Feldis, D. Lonis, J. Royer, Y. Gobil, G. Passemard, P. Maury, F. Jourdan, M. Cordeau, T. Morel, L. Perroud, L. Ulmer, J.F. Lugard, D. Renaud

引用次数: 3

Abstract

This paper describes the integration of Copper with a SiOC/AirGap in a 0.18 /spl mu/m Double Level Metal Interconnect. A new concept is presented to achieve this ultimate interconnect scheme, and its feasibility is demonstrated by a 55% reduction of the total capacitance measured versus a Cu/SiO2 interconnect.

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铜- sioc - airgap集成在双级金属互连中

本文介绍了铜与SiOC/AirGap在0.18 /spl mu/m双电平金属互连中的集成。提出了一种新的概念来实现这种最终的互连方案，并通过与Cu/SiO2互连相比减少55%的总电容来证明其可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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