G. Shekhawat, O. Kolosov, G. Briggs, E. Shaffer, S.J. Martin, R. Geer
{"title":"Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration","authors":"G. Shekhawat, O. Kolosov, G. Briggs, E. Shaffer, S.J. Martin, R. Geer","doi":"10.1109/IITC.2000.854293","DOIUrl":null,"url":null,"abstract":"A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution /spl les/10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution /spl les/10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.