银倍半氧烷基超低k介电薄膜的物理和电学特性

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI:10.1109/IITC.2000.854292

R. Donaton, F. Iacopi, R. Baklanov, D. Shamiryan, B. Coenegrachts, H. Struyf, M. Lepage, M. Meuris, M. Van Hove, W. D. Gray, H. Meynen, D. de Roest, S. Vanhaelemeersch, K. Maex

{"title":"银倍半氧烷基超低k介电薄膜的物理和电学特性","authors":"R. Donaton, F. Iacopi, R. Baklanov, D. Shamiryan, B. Coenegrachts, H. Struyf, M. Lepage, M. Meuris, M. Van Hove, W. D. Gray, H. Meynen, D. de Roest, S. Vanhaelemeersch, K. Maex","doi":"10.1109/IITC.2000.854292","DOIUrl":null,"url":null,"abstract":"Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It is shown that exposure of the films to plasma environments results in a change of porosity. A low-K dielectric film with a pore size around 3.5 nm is successfully integrated in 0.2 /spl mu/m single damascene structures.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films\",\"authors\":\"R. Donaton, F. Iacopi, R. Baklanov, D. Shamiryan, B. Coenegrachts, H. Struyf, M. Lepage, M. Meuris, M. Van Hove, W. D. Gray, H. Meynen, D. de Roest, S. Vanhaelemeersch, K. Maex\",\"doi\":\"10.1109/IITC.2000.854292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It is shown that exposure of the films to plasma environments results in a change of porosity. A low-K dielectric film with a pore size around 3.5 nm is successfully integrated in 0.2 /spl mu/m single damascene structures.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

介绍了一种基于道康宁硅氧烷的超低钾电介质的物理和电学特性。研究了薄膜的折射率、SiH键密度、热稳定性和吸湿性等性能与工艺条件的关系。结果表明，薄膜暴露在等离子体环境中会导致孔隙率的变化。成功地将孔径约为3.5 nm的低k介电膜集成到0.2 /spl mu/m的单硅片结构中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films

Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It is shown that exposure of the films to plasma environments results in a change of porosity. A low-K dielectric film with a pore size around 3.5 nm is successfully integrated in 0.2 /spl mu/m single damascene structures.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

自引率

0.00%

发文量