{"title":"通过建筑学研究未登陆地区的新方法。应用于高级互连:低k铝和铜双大马士革","authors":"P. Gayet, C. Lair, E. van den Vegt","doi":"10.1109/IITC.2000.854286","DOIUrl":null,"url":null,"abstract":"This paper describes a new test structure developed to study unlanded vias. The limitation of conventional chains to characterize vias is shown. The new structures enabled us to improve product yield in a 0.18 /spl mu/m technology using HSQ and aluminum interconnects. Finally, it is emphasized that it is very useful to compare different copper dual damascene architectures.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New method to study unlanded via architecture. Application to advanced interconnects: Al with low k and copper dual damascene\",\"authors\":\"P. Gayet, C. Lair, E. van den Vegt\",\"doi\":\"10.1109/IITC.2000.854286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a new test structure developed to study unlanded vias. The limitation of conventional chains to characterize vias is shown. The new structures enabled us to improve product yield in a 0.18 /spl mu/m technology using HSQ and aluminum interconnects. Finally, it is emphasized that it is very useful to compare different copper dual damascene architectures.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New method to study unlanded via architecture. Application to advanced interconnects: Al with low k and copper dual damascene
This paper describes a new test structure developed to study unlanded vias. The limitation of conventional chains to characterize vias is shown. The new structures enabled us to improve product yield in a 0.18 /spl mu/m technology using HSQ and aluminum interconnects. Finally, it is emphasized that it is very useful to compare different copper dual damascene architectures.