集成低钾电介质与铜金属化的电气可靠性问题

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 1900-01-01 DOI:10.1109/IITC.2000.854289

Z. Wu, Z.W. Shiung, C.C. Wang, K. Fang, R. G. Wu, Y.L. Liu, B. Tsui, M. Chen, W. Chang, P. Chou, S. Jang, C. Yu, M. Liang

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引用次数: 3

摘要

研究了两种有机芳香低钾材料(k2.6 /spl sim/2.8)的电气可靠性问题。两种材料均具有良好的热稳定性和抗铜渗透的介电阻隔性能。在偏温应力(BTS)下，首次观察到C-V曲线失稳。这可以用应力诱导电介质极化电荷模型来解释。这种不稳定性可能是电路长期稳定性的问题。

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Electrical reliability issues of integrating low-K dielectrics with Cu metallization

Electrical reliability issues of two organic aromatic low-K materials (K 2.6/spl sim/2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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