电镀Cu薄膜自退火与热退火过程中应力与织构演化的关系

Haebum Lee, S. Lopatin, S. Wong
{"title":"电镀Cu薄膜自退火与热退火过程中应力与织构演化的关系","authors":"Haebum Lee, S. Lopatin, S. Wong","doi":"10.1109/IITC.2000.854298","DOIUrl":null,"url":null,"abstract":"Electroplated Cu films with different plating conditions and different thickness are characterized during self- and thermal annealing. Faster recrystallization and stress development at room temperature are observed as the plating current density and film thickness are increased. Strong correlation between stress and texture behavior is found for all Cu films and is explained by the minimization of surface/interface energy and strain energy in anisotropic metal films.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"117","resultStr":"{\"title\":\"Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films\",\"authors\":\"Haebum Lee, S. Lopatin, S. Wong\",\"doi\":\"10.1109/IITC.2000.854298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electroplated Cu films with different plating conditions and different thickness are characterized during self- and thermal annealing. Faster recrystallization and stress development at room temperature are observed as the plating current density and film thickness are increased. Strong correlation between stress and texture behavior is found for all Cu films and is explained by the minimization of surface/interface energy and strain energy in anisotropic metal films.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"117\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854298\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 117

摘要

在自退火和热退火过程中,对不同电镀条件和厚度的电镀铜膜进行了表征。在室温下,随着电镀电流密度和镀层厚度的增加,再结晶和应力发展速度加快。所有Cu薄膜的应力和织构行为之间存在很强的相关性,这可以用各向异性金属薄膜的表面/界面能和应变能最小化来解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films
Electroplated Cu films with different plating conditions and different thickness are characterized during self- and thermal annealing. Faster recrystallization and stress development at room temperature are observed as the plating current density and film thickness are increased. Strong correlation between stress and texture behavior is found for all Cu films and is explained by the minimization of surface/interface energy and strain energy in anisotropic metal films.
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