{"title":"电镀Cu薄膜自退火与热退火过程中应力与织构演化的关系","authors":"Haebum Lee, S. Lopatin, S. Wong","doi":"10.1109/IITC.2000.854298","DOIUrl":null,"url":null,"abstract":"Electroplated Cu films with different plating conditions and different thickness are characterized during self- and thermal annealing. Faster recrystallization and stress development at room temperature are observed as the plating current density and film thickness are increased. Strong correlation between stress and texture behavior is found for all Cu films and is explained by the minimization of surface/interface energy and strain energy in anisotropic metal films.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"117","resultStr":"{\"title\":\"Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films\",\"authors\":\"Haebum Lee, S. Lopatin, S. Wong\",\"doi\":\"10.1109/IITC.2000.854298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electroplated Cu films with different plating conditions and different thickness are characterized during self- and thermal annealing. Faster recrystallization and stress development at room temperature are observed as the plating current density and film thickness are increased. Strong correlation between stress and texture behavior is found for all Cu films and is explained by the minimization of surface/interface energy and strain energy in anisotropic metal films.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"117\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854298\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films
Electroplated Cu films with different plating conditions and different thickness are characterized during self- and thermal annealing. Faster recrystallization and stress development at room temperature are observed as the plating current density and film thickness are increased. Strong correlation between stress and texture behavior is found for all Cu films and is explained by the minimization of surface/interface energy and strain energy in anisotropic metal films.