Inline monitoring of multi-level dual inlaid copper interconnect technologies

Abstract

A six level manufacturable copper interconnect technology using metal-first dual inlaid integration for a 0.2 /spl mu/m node is discussed. Various aspects of the technology can be monitored using specially designed resistance measurement structures. Relationship between: (i) inline electrical measurements, (ii) inline physical measurements and (iii) final product characteristics are analyzed and used to window the process flow. This interconnect system can be used to produce microprocessors, SRAMs, and digital signal processors.