嵌入有机低钾电介质中的水引起的钨经中毒

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854311

K. Ikeda, T. Hasegawa, K. Tokunaga, M. Fukasawa, H. Kito, T. Miyamoto, S. Kadomura

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引用次数: 0

摘要

介质膜吸湿性的控制是制备多层互连材料的关键技术之一。通过实验，我们在有机低钾薄膜上沉积二氧化硅硬掩膜中发现了一个新的疏水点。有机低钾应用于钨电极铝互连中的截留水是通过中毒引起的。我们表明，通过插入排气步骤和使用化学形成的薄膜，我们可以避免这个问题。

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Tungsten via poisoning caused by water trapped in embedded organic low-K dielectrics

The control of hygroscopicity in dielectric films is one of the key technologies applied in the fabrication of multilevel interconnections. By experiment we identified a new water trap site formation in a silicon dioxide hard mask deposited on organic low-K film. The trapped water causes via poisoning of the organic low-K application in aluminum interconnections with tungsten electrodes. We showed that by inserting an out-gassing step and using a chemically formed film we can avoid this problem.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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