Characterization and integration of porous extra low-k (XLK) dielectrics

Abstract

Porous XLK dielectric films have been characterized and integrated into one level metal Cu damascene test structures. The material shows reduced dielectric constant as well as lower modulus compared with dense HSQ. Initial one level metal Cu/XLK damascene integration studies demonstrate the feasibility and issues associated with the use of porous low-k materials. Parametric test data show good capacitance and leakage current distributions.