Trench and via filling profile simulations for copper electroplating process

Abstract

We have developed a simulation method to calculate filling profile in sub-micron scale trenches and vias using Cu electroplating. The physical properties (diffusivity and surface reaction rate) of additives are directly incorporated in the boundary condition of this method so that the effects of physical properties of the additives on profile of filling can be evaluated. Using this method, we clarified that micro-knobs and overhangs on seed layer are important for creating a void or seam in the Cu film.