0.42 /spl mu/m contacted pitch dual damascene copper interconnect for 0.15 /spl mu/m EDRAM using tapered via aligned to trench

Abstract

A tapered via aligned to a trench without any expanding of trench width for 0.42 /spl mu/m contacted pitch dual damascene Cu interconnect has been studied. Cu via filling and via electrical properties were dependent on shapes of vias, and it has been found that the aligned tapered via has advantages for the fine pitch Cu dual damascene interconnect.