通过沟槽和填充剖面模拟镀铜过程

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854273

K. Kobayashi, A. Sano, H. Akahoshi, T. Itabashi, T. Haba, S. Fukada, H. Miyazaki

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引用次数: 6

摘要

本文提出了一种模拟计算亚微米尺度沟槽和镀铜过孔填充剖面的方法。将添加剂的物理性质(扩散率和表面反应速率)直接纳入该方法的边界条件，从而可以评价添加剂的物理性质对填充剖面的影响。通过这种方法，我们明确了种子层上的微凸起和悬垂对于在Cu膜中形成空隙或缝隙是重要的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Trench and via filling profile simulations for copper electroplating process

We have developed a simulation method to calculate filling profile in sub-micron scale trenches and vias using Cu electroplating. The physical properties (diffusivity and surface reaction rate) of additives are directly incorporated in the boundary condition of this method so that the effects of physical properties of the additives on profile of filling can be evaluated. Using this method, we clarified that micro-knobs and overhangs on seed layer are important for creating a void or seam in the Cu film.

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来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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