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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)最新文献

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Investigation of electronic noise in THz SiGe HBTs by microscopic simulation 太赫兹SiGe hbt中电子噪声的微观模拟研究
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798131
C. Jungemann, Sung-Min Hong
{"title":"Investigation of electronic noise in THz SiGe HBTs by microscopic simulation","authors":"C. Jungemann, Sung-Min Hong","doi":"10.1109/BCTM.2013.6798131","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798131","url":null,"abstract":"Noise in an ultimate SiGe HBT with peak cutoff and maximum oscillation frequencies above 1THz is investigated by a microscopic transport model based on the Boltzmann equation, which can handle the quasi-ballistic transport, high frequencies and the complicated band structure in such devices. The noise performance of the transistor is excellent due to the high intrinsic speed. For example, the minimum noise figure can be as low as 0.7dB at 100GHz for this intrinsic device. A drawback of this device is the low collector/emitter breakdown voltage and above this voltage impact ionization degrades the noise performance.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133885552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Compact V band frequency doubler with true balanced differential output 紧凑的V波段倍频器与真正的平衡差分输出
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798173
S. Yuan, H. Schumacher
{"title":"Compact V band frequency doubler with true balanced differential output","authors":"S. Yuan, H. Schumacher","doi":"10.1109/BCTM.2013.6798173","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798173","url":null,"abstract":"This paper presents a compact V band Gilbert cell based frequency doubler that generates a truly balanced differential output signal. By analyzing the mechanism causing the imbalanced output in a Gilbert cell based frequency doubler, a Gilbert cell based doubler with a common-mode rejection transformer is designed for V band applications in a 0.13μm SiGe:C HBT process. The doubler delivers about 0.3dBm power at 65GHz, with a 3-dB bandwidth of 20GHz from 55 to 75 GHz, and a power consumption of 50 mW. The measured amplitude imbalance is +0.3/-0.2 dB in the 15GHz bandwidth from 60 to 75GHz.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133273367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency 肖特基势垒二极管在90nm SiGe BiCMOS工艺工作近2.0太赫兹截止频率
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798147
V. Jain, P. Cheng, B. J. Gross, R. Camillo-Castillo, J. Pekarik, J. Adkisson, Qizhi Z. Liu, P. Gray, V. Kaushal, D. Harame, A. DiVergilio
{"title":"Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency","authors":"V. Jain, P. Cheng, B. J. Gross, R. Camillo-Castillo, J. Pekarik, J. Adkisson, Qizhi Z. Liu, P. Gray, V. Kaushal, D. Harame, A. DiVergilio","doi":"10.1109/BCTM.2013.6798147","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798147","url":null,"abstract":"High performance Schottky Barrier Diodes (SBDs) with cut-off frequency (fc) ~2.0 THz integrated into a 90nm SiGe BiCMOS technology for millimeter wave (mm-wave) applications are presented in this paper. To our knowledge, this is the highest reported fc for a SBD in a BiCMOS technology. The SBDs reported here have low reverse bias leakage with breakdown voltage of ~5V, and have been integrated in the base technology without the addition of any extra processing step. The affects of variation of critical process and device parameters - undoped silicon layer (n-epi) thickness, thermal cycle associated with deep-trench formation, cathode reach-through width, and anode area on device performance have also been investigated and are presented here.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114598735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
InP HBT technology and modeling HBT技术与建模
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798159
D. Hitko, J. Li
{"title":"InP HBT technology and modeling","authors":"D. Hitko, J. Li","doi":"10.1109/BCTM.2013.6798159","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798159","url":null,"abstract":"InP HBT technologies have reached a level of maturity where mixed-signal ICs with 1000s of transistors have become fairly routine in a regime where high speed, low jitter, and high dynamic range are discriminators, necessitating simulator-efficient compact model representations covering a range of device sizes and all operating modes. In comparison to the more traditional graded-base SiGe bipolar devices, InP HBTs have a number of traits that make them unique from a modeling perspective. An overview of InP HBT device characteristics is presented, along with highlights of a comprehensive device characterization and modeling strategy implemented to support the development of a scalable compact model based on VBIC for the design of high-speed mixed-signal circuits.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134048826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-Quality varactors and Schottky-Diodes in SiGe:C Technology for mm-Wave and THz applications 高质量的变容二极管和肖特基二极管在SiGe:C技术的毫米波和太赫兹应用
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798149
O. Tesson, S. Wane, S. Bardy, L.R. du Roscoat, M. Ranaivoniarivo, O. Doussin, D. Bajon, L. Leyssenne, P. Descamps
{"title":"High-Quality varactors and Schottky-Diodes in SiGe:C Technology for mm-Wave and THz applications","authors":"O. Tesson, S. Wane, S. Bardy, L.R. du Roscoat, M. Ranaivoniarivo, O. Doussin, D. Bajon, L. Leyssenne, P. Descamps","doi":"10.1109/BCTM.2013.6798149","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798149","url":null,"abstract":"This paper presents the design and experimental characterization of High-Quality varactors and Schottky Diodes in SiGe:C Technology. A new layout topology for differential varactor is proposed to significantly improve its quality factor up to the Ka band. This new layout topology addresses the typical trade-off that designers often face between the quality factor and the tuning range. 2x improvement of the quality factor up to 30 GHz over conventional layout topology made of multi fingers is demonstrated. On the other side, special care has been taken to minimize parasitic capacitance between anodes to keep the tuning range stable. Measured VCO with this new type of varactor shows a reduction of 2 dB in the Phase Noise at 1 MHz from the carrier. Silicon-based Schottky Diodes arrays with Cut-Off frequencies in the THz domain are designed and fabricated. Concurrent optimization of Schottky Diode arrays geometry and electrical performances (Cutoff frequency, parasitic, Quality-factor, Sensitivity, Responsiveness, etc.) is carried out based on careful modeling and experimental characterizations. Analysis of the Schottky Diode arrays including sweep in DC-biasing conditions to control non-linearities is studied. Detection mechanisms related to the non-linear behavior are studied and figures of merit are introduced for their analysis.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124087660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 12 bit 1.6 GS/s BiCMOS 2×2 hierarchical time-interleaved pipeline ADC 一个12位1.6 GS/s BiCMOS 2×2分层时间交错流水线ADC
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798144
M. El-Chammas, Xiaopeng Li, S. Kimura, K. Maclean, J. Hu, M. Weaver, Matthew Gindlesperger, S. Kaylor, R. Payne, C. Sestok, W. Bright
{"title":"A 12 bit 1.6 GS/s BiCMOS 2×2 hierarchical time-interleaved pipeline ADC","authors":"M. El-Chammas, Xiaopeng Li, S. Kimura, K. Maclean, J. Hu, M. Weaver, Matthew Gindlesperger, S. Kaylor, R. Payne, C. Sestok, W. Bright","doi":"10.1109/BCTM.2013.6798144","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798144","url":null,"abstract":"A 12 bit 1.6 GS/s pipeline ADC realized in a 0.18 μm complementary BiCMOS SiGe process is presented. The ADC consists of a four-way time-interleaved hierarchical structure and a master-slave T/H to improve the dynamic performance of the individual sub-ADCs and to reduce both the complexity of the required interleaving background calibration algorithms and the error rate. It achieves an SFDR of 79 dBc at low frequency inputs and 66 dBc at Nyquist, and has an error rate of less than 10-9.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"1959 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132373512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A direct digital synthesis based chirp radar transmitter in 0.13 µm SiGe technology 基于0.13 μ m SiGe技术的直接数字合成啁啾雷达发射机
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798140
Jianjun Yu, Joseph Cali, Feng Zhao, F. Dai, Xin Jin, M. Pukish, Yuehai Jin, Zachary Hubbard, J. Irwin, R. Jaeger, Andre Aklian
{"title":"A direct digital synthesis based chirp radar transmitter in 0.13 µm SiGe technology","authors":"Jianjun Yu, Joseph Cali, Feng Zhao, F. Dai, Xin Jin, M. Pukish, Yuehai Jin, Zachary Hubbard, J. Irwin, R. Jaeger, Andre Aklian","doi":"10.1109/BCTM.2013.6798140","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798140","url":null,"abstract":"This paper presents an X-band direct digital synthesis (DDS) based chirp radar transmitter implemented in 0.13μm SiGe BiCMOS technology. The transmitter contains a quadrature DDS, two low-pass filters, an IF IQ modulator, a programmable gain amplifier (PGA), a RF mixer and a pre-amplifier. The DDSs, built with two digital-to-analog converters (DACs), generate two-channel IQ baseband chirp signals from 62MHz to 77MHz. The IQ chirp signals are filtered by two programmable 5th-order Butterworth filters before up-converted to the IF frequency with IQ modulators. The filtered IF signal is further up-converted to the desired radio frequency by an RF mixer. The proposed transmitter thus generates a chirp signal at 8.6GHz, consuming a total power of 333 mW from 2.2V and 1.5V power supplies.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130801679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 2GSps 12bit DAC with SFDR >57.5dBc up to Nyquist bandwidth 一个2GSps的12位DAC, SFDR >57.5dBc，最高可达奈奎斯特带宽
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798180
Lei Zhou, Danyu Wu, Fan Jiang, Jin Wu, Zhi Jin, Xinyu Liu
{"title":"A 2GSps 12bit DAC with SFDR >57.5dBc up to Nyquist bandwidth","authors":"Lei Zhou, Danyu Wu, Fan Jiang, Jin Wu, Zhi Jin, Xinyu Liu","doi":"10.1109/BCTM.2013.6798180","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798180","url":null,"abstract":"In this paper we present a 2GSps 12bit current steering digital-to-analog converter (DAC), in 100G Ft 0.18μm SiGe HBT technology. An improved switching sequence is proposed to compensate the gradient error and reduce the impact of cell-dependent-delay-variation. According to measured results, the test chip achieved a DNL/INL of 0.6/0.95 LSB respectively. The measured SFDR at low frequency is above 72dBc, and the lowest SFDR up to Nyquist frequency is above 57.5dBc.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125402195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Microwave/mm-Wave imaging systems 微波/毫米波成像系统
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798142
S. Ahmed
{"title":"Microwave/mm-Wave imaging systems","authors":"S. Ahmed","doi":"10.1109/BCTM.2013.6798142","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798142","url":null,"abstract":"The interest in microwave and mm-wave imaging systems is continuously increasing. Synthetic aperture radar (SAR) used by satellite remote sensing has driven the development of microwave imaging techniques since many decades. In the meanwhile, technological advances in the manufacturing of semiconductors allow for affordable imaging solutions not only for satellites, but also for the daily use. Imaging for security applications has been in focus since some years; currently systems are also in development to address the need for non-destructive testing and evaluation (NDT&E) demands. This paper discusses the requirements behind the realization of active microwave imaging systems in order to align the modern capabilities of semiconductor manufacturing with the actual demands for efficient imaging systems.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114275932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Resistive switching in metal-oxide-metal devices: Fundamental understanding in relation to material characterization 金属-氧化物-金属器件中的电阻开关:对材料特性的基本理解
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798164
C. Vallée, C. Mannequin, P. Gonon, L. Latu-Romain, H. Grampeix, V. Jousseaume
{"title":"Resistive switching in metal-oxide-metal devices: Fundamental understanding in relation to material characterization","authors":"C. Vallée, C. Mannequin, P. Gonon, L. Latu-Romain, H. Grampeix, V. Jousseaume","doi":"10.1109/BCTM.2013.6798164","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798164","url":null,"abstract":"This emerging technology tutorial is focused on Resistive non-volatile memories based on a MIM structure with a high k dielectric such as HfO2.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115033989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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