InP HBT technology and modeling

Abstract

InP HBT technologies have reached a level of maturity where mixed-signal ICs with 1000s of transistors have become fairly routine in a regime where high speed, low jitter, and high dynamic range are discriminators, necessitating simulator-efficient compact model representations covering a range of device sizes and all operating modes. In comparison to the more traditional graded-base SiGe bipolar devices, InP HBTs have a number of traits that make them unique from a modeling perspective. An overview of InP HBT device characteristics is presented, along with highlights of a comprehensive device characterization and modeling strategy implemented to support the development of a scalable compact model based on VBIC for the design of high-speed mixed-signal circuits.