金属-氧化物-金属器件中的电阻开关:对材料特性的基本理解

C. Vallée, C. Mannequin, P. Gonon, L. Latu-Romain, H. Grampeix, V. Jousseaume
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引用次数: 1

摘要

本新兴技术教程的重点是基于具有高k介电介质(如HfO2)的MIM结构的电阻性非易失性存储器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Resistive switching in metal-oxide-metal devices: Fundamental understanding in relation to material characterization
This emerging technology tutorial is focused on Resistive non-volatile memories based on a MIM structure with a high k dielectric such as HfO2.
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