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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)最新文献

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Comparative analysis of compact noise model formulations for SiGe-HBTs SiGe-HBTs紧凑噪声模型公式的比较分析
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798161
F. Vitale, R. van der Toorn
{"title":"Comparative analysis of compact noise model formulations for SiGe-HBTs","authors":"F. Vitale, R. van der Toorn","doi":"10.1109/BCTM.2013.6798161","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798161","url":null,"abstract":"In this paper a comparative analysis of compact noise model formulations for intrinsic bipolar transistors is presented. The analysis includes the approximated transport noise model feasible for compact model implementations and a correlated noise model derived from the non quasi-static theory of bipolar transistors. The models are first compared at the intrinsic device level, taking as reference analytical curves derived from the Van der Ziel/Van Vliet noise theory. Differences and limitations of the noise models are discussed. Finally, depletion capacitances and parasitic resistances are added to the intrinsic noise models to enable experimental assessment of their significance with respect to measured data on an industrial device.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115676120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An X-band radar receiver with bandwidth reduction implemented in 0.13µm SiGe technology 采用0.13 μ m SiGe技术实现了带宽降低的x波段雷达接收机
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798139
Jianjun Yu, Desheng Ma, X. Geng, Feng Zhao, Joseph Cali, F. Dai, Yuan Yao, Yuehai Jin, J. Irwin, R. Jaeger, Andre Aklian
{"title":"An X-band radar receiver with bandwidth reduction implemented in 0.13µm SiGe technology","authors":"Jianjun Yu, Desheng Ma, X. Geng, Feng Zhao, Joseph Cali, F. Dai, Yuan Yao, Yuehai Jin, J. Irwin, R. Jaeger, Andre Aklian","doi":"10.1109/BCTM.2013.6798139","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798139","url":null,"abstract":"This paper presents an X-band chirp radar receiver with bandwidth reduction for range detection. The proposed receiver is composed primarily of a RF front end with reconfigurable bandwidth, a receiver baseband and an ADC. The receiver uses dual down-conversion architecture to convert the X-band chirp signal to the baseband signal, which is further mixed with a replica of the transmitted chirp through stretch processing in a modified Weaver receiver. The resulting waveform is of greatly reduced bandwidth and thus relaxes the power and bandwidth requirements of the ADC. The de-stretched baseband waveform is a single tone signal with a fixed frequency that is related to the range of the target. Therefore, the proposed radar receiver with stretch processing achieves power and bandwidth reductions without degrading the range resolution. The radar receiver including a 12-b ADC was implemented in a 0.13μm SiGe technology with die area of 2.64 mm2 and total power consumption of 403 mW from the 2.2V and 1.5V power supplies.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125360077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TCAD modeling of accumulated damage during time-dependent mixed-mode stress 时变混合模态应力累积损伤的TCAD建模
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798170
U. Raghunathan, P. Chakraborty, Brian R. Wier, J. Cressler, H. Yasuda, P. Menz
{"title":"TCAD modeling of accumulated damage during time-dependent mixed-mode stress","authors":"U. Raghunathan, P. Chakraborty, Brian R. Wier, J. Cressler, H. Yasuda, P. Menz","doi":"10.1109/BCTM.2013.6798170","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798170","url":null,"abstract":"We study the accumulated degradation of SiGe HBTs under time-dependent mixed-mode stress using a new physics-based TCAD degradation model that simulates hot carrier generation and propagation to oxide interfaces, resulting in trap formation. We calibrate the avalanche generation and also do a multipoint calibration of damage on the I-V output plane to accurately predict the accumulated stress damage for a single device over multiple bias points. Looking at the region of the output plane dominated by trap formation, we show that accumulation of traps can be path-independent as long as trap availability is not limiting. We demonstrate this with good correlation between simulation and measurement.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124130427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Investigation of power and linearity performance for low- and high-voltage SiGe HBTs 低压和高压SiGe hbt的功率和线性性能研究
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798132
T. Dinh, R. Pijper, T. Vanhoucke, E. Gridelet, D. Klaassen
{"title":"Investigation of power and linearity performance for low- and high-voltage SiGe HBTs","authors":"T. Dinh, R. Pijper, T. Vanhoucke, E. Gridelet, D. Klaassen","doi":"10.1109/BCTM.2013.6798132","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798132","url":null,"abstract":"Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which indicates the limitation of each type of device for RF power amplifier applications.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126280702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Stacked Contact Electromigration in advanced SiGe heterojunction bipolar transistors 先进SiGe异质结双极晶体管的堆叠触点电迁移
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798169
Jonggook Kim, A. Sadovnikov, Jin Tang, Young-Joon Park, W. van Noort, J. Babcock
{"title":"Stacked Contact Electromigration in advanced SiGe heterojunction bipolar transistors","authors":"Jonggook Kim, A. Sadovnikov, Jin Tang, Young-Joon Park, W. van Noort, J. Babcock","doi":"10.1109/BCTM.2013.6798169","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798169","url":null,"abstract":"Contact Electromigration (EM) constraining the performance for a SiGe hetero-junction bipolar transistor (HBT) is investigated. By incorporating a stacked contact structure with Via, the time-to-fail (TTF) increases by ten-fold and contact EM current density (JC_CNT_EM) increases by three-fold. These improvements are shown in experiments incorporating a space between contact and Via, a multi-level stack, and multi-Via stack effects. Also this result can be theoretically explained by a restoring force between contact and Via called Blech effect and unidirectional current flow. Consequently, JC_CNT_EM is no longer limited in a safe operating area (SOA) of a HBT and EM is regulated by only the top metal in a stacked contact structure. This allows us to design an EM enhanced HBT primitive cell without compromising device performance and to eliminate processing problems caused by rectangular contact.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132092736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study of ultra-high performance SiGe HBT devices on SOI SOI上超高性能SiGe HBT器件的研究
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798184
T. Thibeault, E. Preisler, Jieyin Zheng, Li Dong, S. Chaudhry, S. Jordan, M. Racanelli
{"title":"A study of ultra-high performance SiGe HBT devices on SOI","authors":"T. Thibeault, E. Preisler, Jieyin Zheng, Li Dong, S. Chaudhry, S. Jordan, M. Racanelli","doi":"10.1109/BCTM.2013.6798184","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798184","url":null,"abstract":"The authors present a study of SiGe HBTs with FT>200GHz on an SOI substrate for the first time. The devices built on SOI exhibit a degradation of approximately 7 Ghz in Ft as compared with bulk devices while Fmax remains near 280 GHz. As expected, Ccs is reduced by ~ 40%. A loss of about 0.75 V in safe operating area is observed for the HBTs built on SOI, but approximately half of this can be regained by allowing the footprint to increase to the original, bulk-silicon HBT footprint by increasing the spacing from the collector to the deep trench isolation.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122192276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 4GS/s 8bit ADC fabricated in 0.35µm SiGe BiCMOS technology 采用0.35µm SiGe BiCMOS技术制作的4GS/s 8位ADC
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798146
Danyu Wu, Fan Jiang, Lei Zhou, Jin Wu, Yinkun Huang, Zhi Jin, Xinyu Liu
{"title":"A 4GS/s 8bit ADC fabricated in 0.35µm SiGe BiCMOS technology","authors":"Danyu Wu, Fan Jiang, Lei Zhou, Jin Wu, Yinkun Huang, Zhi Jin, Xinyu Liu","doi":"10.1109/BCTM.2013.6798146","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798146","url":null,"abstract":"In this paper, a low cost 4GS/s 8bit Folding-and-Interpolation (F&I) ADC has been demonstrated. To avoid threshold-mismatch and delay-mismatch between coarse and fine quantizer, a novel coarse quantizer with analog pre-processing circuits are proposed. According to the measurement result, the proposed coarse quantizer has successfully eliminated the glitch code. The ADC is capable of sampling analog input frequencies up to 1.5GHz with greater than 7.0 effective number of bits (ENOB) performance. The ADC has a die size of 3.8×3.8 mm2 and consumes 4.1W of power.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115547101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Impact of reverse EB stress and mixed-mode stress on low-frequency noise for SiGe HBTs in forward and inverse modes 反向EB应力和混合模应力对正、逆模SiGe HBTs低频噪声的影响
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798166
Jin Tang, Jonggook Kim, J. Babcock, A. Sadovnikov, T. Krakowski
{"title":"Impact of reverse EB stress and mixed-mode stress on low-frequency noise for SiGe HBTs in forward and inverse modes","authors":"Jin Tang, Jonggook Kim, J. Babcock, A. Sadovnikov, T. Krakowski","doi":"10.1109/BCTM.2013.6798166","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798166","url":null,"abstract":"We present in this work the impact of electrical reliability stress on low-frequency noise for SiGe HBTs in forward and inverse modes. The reverse EB stress and the forward mixed-mode stress are investigated. For the first time inverse mode noise is used as a tool to investigate stress-induced damage. The fact that reverse EB stress degrades SiGe HBTs low-frequency noise in the forward mode but not in the inverse mode indicates that the stress-induced traps are located in the EB spacer oxide. Mixed-mode stress degrades both the forward and inverse modes low-frequency noise, consistent with the theory that both the EB and CB junctions are damaged during the stress. The observed noise degradation under stress calls for accurate noise aging modeling in reliability simulation.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126200261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A high-resistivity SiGe BiCMOS technology for WiFi RF front-end-IC solutions 用于WiFi射频前端ic解决方案的高电阻率SiGe BiCMOS技术
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798183
A. Joseph, J. Gambino, R. Rassel, Eric Johnson, H. Ding, Shyam Parthasarthy, Venkata Vanakuru, Santosh K. Sharma, M. Jaffe, Derrick Liu, M. Zierak, R. Camillo-Castillo, A. Stamper, J. Dunn
{"title":"A high-resistivity SiGe BiCMOS technology for WiFi RF front-end-IC solutions","authors":"A. Joseph, J. Gambino, R. Rassel, Eric Johnson, H. Ding, Shyam Parthasarthy, Venkata Vanakuru, Santosh K. Sharma, M. Jaffe, Derrick Liu, M. Zierak, R. Camillo-Castillo, A. Stamper, J. Dunn","doi":"10.1109/BCTM.2013.6798183","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798183","url":null,"abstract":"We present for the first time a novel high resistivity bulk SiGe BiCMOS technology that has been optimized for a WiFi RF front-end-IC (FEIC) integration. A nominally 1000 Ohm-cm p-type silicon substrate is utilized to integrate several SiGe HBTs for power amplifiers (PAs), a SiGe HBT low-noise amplifier (LNA), and isolated nFET RF switch device. Process elements include trench isolation for low-loss passives and reduced parasitic coupling, and a lower-resistivity region for the FETs to minimize changes to the circuit library.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129793501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
An on-chip SiGe HBT characterization circuit for use in self-healing RF systems 用于自愈射频系统的片上SiGe HBT表征电路
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798176
D. Howard, T. England, N. Lourenco, A. Cardoso, J. Cressler
{"title":"An on-chip SiGe HBT characterization circuit for use in self-healing RF systems","authors":"D. Howard, T. England, N. Lourenco, A. Cardoso, J. Cressler","doi":"10.1109/BCTM.2013.6798176","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798176","url":null,"abstract":"An on-chip device characterization circuit that extracts the current gain of a SiGe HBT test transistor, and which can be useful in the context of various “self-healing” RF circuits and systems, is presented. The characterization circuit includes built-in temperature compensation that enables accurate measurement of the current gain of the test device over a wide temperature range. The device characterization circuit can also be used to measure variations in the current gain of the test device due to process, voltage, and temperature (PVT) variations, as well as other phenomena that can potentially degrade performance.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127899744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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