发布求助
文献互助 智能选刊 最新文献

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)最新文献

筛选
英文 中文
A transient triggered bipolar clamp for electrostatic discharge protection in SiGe BiCMOS technologies SiGe BiCMOS技术中用于静电放电保护的瞬态触发双极钳
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798151
S. Parthasarathy, J. Salcedo, J. Hajjar
{"title":"A transient triggered bipolar clamp for electrostatic discharge protection in SiGe BiCMOS technologies","authors":"S. Parthasarathy, J. Salcedo, J. Hajjar","doi":"10.1109/BCTM.2013.6798151","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798151","url":null,"abstract":"An active ESD supply clamp for mixed voltage RF applications developed in advanced SiGe BiCMOS process is introduced. The clamp is designed using a three-stage architecture consisting of transient-detection, timing and beta-multiplication. The proposed design ensures the clamp has very low leakage even when circuits operate at supply voltages that are equal to or beyond the breakdown voltage of the core SiGe bipolar devices. The clamp's turn-on characteristics spans the full duration of the actual ESD events making it fully capable to effectively protect the sensitive devices in the core circuit.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128026179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Automated transit time and transfer current extraction for single transistor geometries 自动传输时间和转移电流提取的单晶体管几何形状
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798136
T. Rosenbaum, M. Schroter, A. Pawlak, S. Lehmann
{"title":"Automated transit time and transfer current extraction for single transistor geometries","authors":"T. Rosenbaum, M. Schroter, A. Pawlak, S. Lehmann","doi":"10.1109/BCTM.2013.6798136","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798136","url":null,"abstract":"The purpose of this work is to establish an automated transit time and transfer current extraction tool for HICUM/L2. The key for realizing this goal was to create an equivalent circuit that includes all relevant elements influencing the extraction by mimicking the HICUM model code. For an accurate determination of the transit time, the equivalent circuit of the intrinsic transistor is required, which is obtained by deembedding the external elements using beforehand extraction information. The realized method is demonstrated to enable automated parameter determination with high accuracy.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134006116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Impact of BEOL stress on BiCMOS9MW HBTs BEOL应力对BiCMOS9MW HBTs的影响
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798181
E. Canderle, P. Chevalier, G. Avenier, N. Derrier, D. Céli, C. Gaquière
{"title":"Impact of BEOL stress on BiCMOS9MW HBTs","authors":"E. Canderle, P. Chevalier, G. Avenier, N. Derrier, D. Céli, C. Gaquière","doi":"10.1109/BCTM.2013.6798181","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798181","url":null,"abstract":"Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed out. Dummies structures were embedded for both DC and HF characterizations which showed a 25% increase for the collector current, and a 21% and 12% increase for the transit frequencies fT and fMAX respectively.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132474087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Light matters: Integrated opto-electronics from consumer to communications 光的问题:集成光电子从消费到通信
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798165
S. Deliwala
{"title":"Light matters: Integrated opto-electronics from consumer to communications","authors":"S. Deliwala","doi":"10.1109/BCTM.2013.6798165","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798165","url":null,"abstract":"Integrated opto-electronics is expected to play an important role across many application areas. Its application to high speed communication has been discussed extensively in last decade especially in context of silicon photonic integrated circuits. But the impact of optoelectronics will be felt in areas as diverse as autonomous vehicles to better user interface for mobile computing. These new and emerging applications provide exciting new opportunity to bring new class of products to the market.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114435200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Integrated low-loss passive SiGe power splitter and combiner operating across 78–86 GHz band 集成低损耗无源SiGe功率分配器和合成器，工作在78-86 GHz频段
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798150
M. Thian, V. Fusco, N. Buchanan, F. Dielacher
{"title":"Integrated low-loss passive SiGe power splitter and combiner operating across 78–86 GHz band","authors":"M. Thian, V. Fusco, N. Buchanan, F. Dielacher","doi":"10.1109/BCTM.2013.6798150","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798150","url":null,"abstract":"This paper describes the design, implementation, and characterization of a new type of passive power splitting and combining structure for use in a differential four-way power-combining amplifier operating at E-band. In order to achieve lowest insertion loss, input and output coils inductances are resonated with shunt capacitances. Simple C-L-C and L-C networks are proposed in order to compensate inductive loading due to routing line that would otherwise introduce mismatch and increase loss. Across 78-86 GHz band, measured insertion loss is about 7 dB. Measured return losses are >10 dB from 73 GHz to 94 GHz at the input port and >9 dB from 60 GHz to 94 GHz at the output port. When integrated with driver and power amplifier cells, the simulated complete circuit exhibits 18.2 dB gain and 20.3 dBm saturated output power.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130131614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Local extraction of base and thermal resistance of bipolar transistors 双极晶体管基极和热阻的局部提取
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798135
R. Setekera, R. van der Toorn, W. Kloosterman
{"title":"Local extraction of base and thermal resistance of bipolar transistors","authors":"R. Setekera, R. van der Toorn, W. Kloosterman","doi":"10.1109/BCTM.2013.6798135","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798135","url":null,"abstract":"We extend the category of parameter extraction methods that utilize weak avalanche under fixed emitter current conditions to extract base resistance. Our new method consistently accounts for self-heating and Early effect so as to arrive at an accurate extraction of both base and thermal resistance. It involves only small variations in bias and temperature conditions, so that parameter extraction as a function of bias and temperature is enabled. The method is directly applicable to transistors - no dedicated test structures are needed - so that the method is cost effective. The method is demonstrated on RF SiGe HBTs.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132546420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A low power, low noise 3nV/√Hz 200fA/√Hz, rapid settling instrumentation amplifier with sub-ppm nonlinearity, 0.2µV/°C max offset drift, 150dB CMRR in 5-to-36V supply 低功耗，低噪声3nV/√Hz 200fA/√Hz，快速沉降仪表放大器，亚ppm非线性，最大失调漂移0.2µV/°C, CMRR 150dB, 5- 36v电源
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798178
M. Gerstenhaber, Oljeta Bida Qirko
{"title":"A low power, low noise 3nV/√Hz 200fA/√Hz, rapid settling instrumentation amplifier with sub-ppm nonlinearity, 0.2µV/°C max offset drift, 150dB CMRR in 5-to-36V supply","authors":"M. Gerstenhaber, Oljeta Bida Qirko","doi":"10.1109/BCTM.2013.6798178","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798178","url":null,"abstract":"An instrumentation amplifier with 3nV/√Hz and 200fA/√Hz RTI noise, 20MHz bandwidth, 40V/μs slew rate, consumes 2mA from a ±2.5V to ±18V supply range. Its high gain CMRR of greater than 150dB and its unity gain error of less than 0.01% extend over temperatures from -55°C to 150°C. It has a sub-ppm load independent gain nonlinearity (THD <; -125dBc) for its full output range, from DC to 2 kHz. Vosi distribution is within ±25μV, drifting less than 0.2μV/°C from -55°C to 150°C. Settling time is less than 0.6μs to 10ppm of a 10V output step. The amplifier is designed in an SOI complementary bipolar process with a die size of 3.3mm<sup>2</sup>.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125437137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Advanced extraction procedure for parasitic collector series resistance contributions in high-speed BiCMOS technologies 高速BiCMOS技术中寄生集电极串联电阻贡献的先进提取方法
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798138
F. Stein, N. Derrier, C. Maneux, D. Céli
{"title":"Advanced extraction procedure for parasitic collector series resistance contributions in high-speed BiCMOS technologies","authors":"F. Stein, N. Derrier, C. Maneux, D. Céli","doi":"10.1109/BCTM.2013.6798138","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798138","url":null,"abstract":"The parasitic collector resistance is of high importance for device performance of HBT manufactured in advanced SiGe technologies. The external collector resistance contribution RCx is a critical modeling parameter for AC and transient operation. If the collector resistance is estimated incorrectly, the RF performance of the modeled device may significantly differ from the manufactured HBT. An advanced test structure for resistance extraction is presented and measured in two different ways. The obtained resistance values and extraction results are verified using analytical equations and quasi-three-dimensional device simulations.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127743445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A broadband 24 GHz bandwidth 54 dB gain 180-mW amplifier employing common-collector combined with capacitive controlled cross-coupled feedback in 0.35 µm SiGe technology 一种宽带24 GHz带宽54 dB增益180-mW放大器，采用共集电极结合电容控制交叉耦合反馈，采用0.35µm SiGe技术
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798157
A. Gharib, G. Fischer, R. Weigel, D. Kissinger
{"title":"A broadband 24 GHz bandwidth 54 dB gain 180-mW amplifier employing common-collector combined with capacitive controlled cross-coupled feedback in 0.35 µm SiGe technology","authors":"A. Gharib, G. Fischer, R. Weigel, D. Kissinger","doi":"10.1109/BCTM.2013.6798157","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798157","url":null,"abstract":"A 54 dB gain amplifier with a 3-dB bandwidth of 24 GHz is presented in this paper. The amplifier consists of three differential stages employing two different feedback techniques that are responsible for the bandwidth extension, without any noticeable reduction of gain, as well as a relatively flat gain response with negligible increase in area and power consumption. The amplifier consumes 180mW from a 3.3V supply and shows a gain-bandwidth product (GBP) of 12 THz.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128216274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
On the safe operating area of bipolar cascode amplifiers 双极级联放大器的安全工作区域
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI: 10.1109/BCTM.2013.6798168
V. d’Alessandro, N. Rinaldi, A. Metzger, Hal Banbrook
{"title":"On the safe operating area of bipolar cascode amplifiers","authors":"V. d’Alessandro, N. Rinaldi, A. Metzger, Hal Banbrook","doi":"10.1109/BCTM.2013.6798168","DOIUrl":"https://doi.org/10.1109/BCTM.2013.6798168","url":null,"abstract":"This paper presents an investigation of the safe-operating-area boundary of bipolar cascode amplifiers in GaAs and SiGe technologies. A simple relation is derived to predict the instability onset due to electrothermal and avalanche effects. Circuit simulations and experiments performed on GaAs test structures are employed to analyze the influence of thermal coupling between transistors and the beneficial impact of base ballasting.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131742497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信