{"title":"低功耗，低噪声3nV/√Hz 200fA/√Hz，快速沉降仪表放大器，亚ppm非线性，最大失调漂移0.2µV/°C, CMRR 150dB, 5- 36v电源","authors":"M. Gerstenhaber, Oljeta Bida Qirko","doi":"10.1109/BCTM.2013.6798178","DOIUrl":null,"url":null,"abstract":"An instrumentation amplifier with 3nV/√Hz and 200fA/√Hz RTI noise, 20MHz bandwidth, 40V/μs slew rate, consumes 2mA from a ±2.5V to ±18V supply range. Its high gain CMRR of greater than 150dB and its unity gain error of less than 0.01% extend over temperatures from -55°C to 150°C. It has a sub-ppm load independent gain nonlinearity (THD <; -125dBc) for its full output range, from DC to 2 kHz. Vosi distribution is within ±25μV, drifting less than 0.2μV/°C from -55°C to 150°C. Settling time is less than 0.6μs to 10ppm of a 10V output step. The amplifier is designed in an SOI complementary bipolar process with a die size of 3.3mm<sup>2</sup>.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A low power, low noise 3nV/√Hz 200fA/√Hz, rapid settling instrumentation amplifier with sub-ppm nonlinearity, 0.2µV/°C max offset drift, 150dB CMRR in 5-to-36V supply\",\"authors\":\"M. Gerstenhaber, Oljeta Bida Qirko\",\"doi\":\"10.1109/BCTM.2013.6798178\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An instrumentation amplifier with 3nV/√Hz and 200fA/√Hz RTI noise, 20MHz bandwidth, 40V/μs slew rate, consumes 2mA from a ±2.5V to ±18V supply range. Its high gain CMRR of greater than 150dB and its unity gain error of less than 0.01% extend over temperatures from -55°C to 150°C. It has a sub-ppm load independent gain nonlinearity (THD <; -125dBc) for its full output range, from DC to 2 kHz. Vosi distribution is within ±25μV, drifting less than 0.2μV/°C from -55°C to 150°C. Settling time is less than 0.6μs to 10ppm of a 10V output step. The amplifier is designed in an SOI complementary bipolar process with a die size of 3.3mm<sup>2</sup>.\",\"PeriodicalId\":272941,\"journal\":{\"name\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2013.6798178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low power, low noise 3nV/√Hz 200fA/√Hz, rapid settling instrumentation amplifier with sub-ppm nonlinearity, 0.2µV/°C max offset drift, 150dB CMRR in 5-to-36V supply
An instrumentation amplifier with 3nV/√Hz and 200fA/√Hz RTI noise, 20MHz bandwidth, 40V/μs slew rate, consumes 2mA from a ±2.5V to ±18V supply range. Its high gain CMRR of greater than 150dB and its unity gain error of less than 0.01% extend over temperatures from -55°C to 150°C. It has a sub-ppm load independent gain nonlinearity (THD <; -125dBc) for its full output range, from DC to 2 kHz. Vosi distribution is within ±25μV, drifting less than 0.2μV/°C from -55°C to 150°C. Settling time is less than 0.6μs to 10ppm of a 10V output step. The amplifier is designed in an SOI complementary bipolar process with a die size of 3.3mm2.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
