{"title":"高速BiCMOS技术中寄生集电极串联电阻贡献的先进提取方法","authors":"F. Stein, N. Derrier, C. Maneux, D. Céli","doi":"10.1109/BCTM.2013.6798138","DOIUrl":null,"url":null,"abstract":"The parasitic collector resistance is of high importance for device performance of HBT manufactured in advanced SiGe technologies. The external collector resistance contribution RCx is a critical modeling parameter for AC and transient operation. If the collector resistance is estimated incorrectly, the RF performance of the modeled device may significantly differ from the manufactured HBT. An advanced test structure for resistance extraction is presented and measured in two different ways. The obtained resistance values and extraction results are verified using analytical equations and quasi-three-dimensional device simulations.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Advanced extraction procedure for parasitic collector series resistance contributions in high-speed BiCMOS technologies\",\"authors\":\"F. Stein, N. Derrier, C. Maneux, D. Céli\",\"doi\":\"10.1109/BCTM.2013.6798138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The parasitic collector resistance is of high importance for device performance of HBT manufactured in advanced SiGe technologies. The external collector resistance contribution RCx is a critical modeling parameter for AC and transient operation. If the collector resistance is estimated incorrectly, the RF performance of the modeled device may significantly differ from the manufactured HBT. An advanced test structure for resistance extraction is presented and measured in two different ways. The obtained resistance values and extraction results are verified using analytical equations and quasi-three-dimensional device simulations.\",\"PeriodicalId\":272941,\"journal\":{\"name\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2013.6798138\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced extraction procedure for parasitic collector series resistance contributions in high-speed BiCMOS technologies
The parasitic collector resistance is of high importance for device performance of HBT manufactured in advanced SiGe technologies. The external collector resistance contribution RCx is a critical modeling parameter for AC and transient operation. If the collector resistance is estimated incorrectly, the RF performance of the modeled device may significantly differ from the manufactured HBT. An advanced test structure for resistance extraction is presented and measured in two different ways. The obtained resistance values and extraction results are verified using analytical equations and quasi-three-dimensional device simulations.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
