双极级联放大器的安全工作区域

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI:10.1109/BCTM.2013.6798168

V. d’Alessandro, N. Rinaldi, A. Metzger, Hal Banbrook

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引用次数: 6

摘要

本文对GaAs和SiGe双极级联放大器的安全工作区域边界进行了研究。导出了一个简单的关系式来预测由于电热和雪崩效应而引起的不稳定的发生。在GaAs测试结构上进行了电路仿真和实验，分析了晶体管间热耦合的影响以及基极镇流器的有利影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the safe operating area of bipolar cascode amplifiers

This paper presents an investigation of the safe-operating-area boundary of bipolar cascode amplifiers in GaAs and SiGe technologies. A simple relation is derived to predict the instability onset due to electrothermal and avalanche effects. Circuit simulations and experiments performed on GaAs test structures are employed to analyze the influence of thermal coupling between transistors and the beneficial impact of base ballasting.

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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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