{"title":"A low power, low noise 3nV/√Hz 200fA/√Hz, rapid settling instrumentation amplifier with sub-ppm nonlinearity, 0.2µV/°C max offset drift, 150dB CMRR in 5-to-36V supply","authors":"M. Gerstenhaber, Oljeta Bida Qirko","doi":"10.1109/BCTM.2013.6798178","DOIUrl":null,"url":null,"abstract":"An instrumentation amplifier with 3nV/√Hz and 200fA/√Hz RTI noise, 20MHz bandwidth, 40V/μs slew rate, consumes 2mA from a ±2.5V to ±18V supply range. Its high gain CMRR of greater than 150dB and its unity gain error of less than 0.01% extend over temperatures from -55°C to 150°C. It has a sub-ppm load independent gain nonlinearity (THD <; -125dBc) for its full output range, from DC to 2 kHz. Vosi distribution is within ±25μV, drifting less than 0.2μV/°C from -55°C to 150°C. Settling time is less than 0.6μs to 10ppm of a 10V output step. The amplifier is designed in an SOI complementary bipolar process with a die size of 3.3mm<sup>2</sup>.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
An instrumentation amplifier with 3nV/√Hz and 200fA/√Hz RTI noise, 20MHz bandwidth, 40V/μs slew rate, consumes 2mA from a ±2.5V to ±18V supply range. Its high gain CMRR of greater than 150dB and its unity gain error of less than 0.01% extend over temperatures from -55°C to 150°C. It has a sub-ppm load independent gain nonlinearity (THD <; -125dBc) for its full output range, from DC to 2 kHz. Vosi distribution is within ±25μV, drifting less than 0.2μV/°C from -55°C to 150°C. Settling time is less than 0.6μs to 10ppm of a 10V output step. The amplifier is designed in an SOI complementary bipolar process with a die size of 3.3mm2.