T. Thibeault, E. Preisler, Jieyin Zheng, Li Dong, S. Chaudhry, S. Jordan, M. Racanelli
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A study of ultra-high performance SiGe HBT devices on SOI
The authors present a study of SiGe HBTs with FT>200GHz on an SOI substrate for the first time. The devices built on SOI exhibit a degradation of approximately 7 Ghz in Ft as compared with bulk devices while Fmax remains near 280 GHz. As expected, Ccs is reduced by ~ 40%. A loss of about 0.75 V in safe operating area is observed for the HBTs built on SOI, but approximately half of this can be regained by allowing the footprint to increase to the original, bulk-silicon HBT footprint by increasing the spacing from the collector to the deep trench isolation.
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