Investigation of power and linearity performance for low- and high-voltage SiGe HBTs

Abstract

Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which indicates the limitation of each type of device for RF power amplifier applications.