低压和高压SiGe hbt的功率和线性性能研究

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI:10.1109/BCTM.2013.6798132

T. Dinh, R. Pijper, T. Vanhoucke, E. Gridelet, D. Klaassen

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引用次数: 1

摘要

通过片上测量和工艺/器件模拟器研究了低电压和高压SiGe HBTs在小信号和大信号区域的线性度和功率性能。通过实验捕捉和分析了柯克效应和雪崩对功率和线性度的影响，指出了每种器件在射频功率放大器应用中的局限性。

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Investigation of power and linearity performance for low- and high-voltage SiGe HBTs

Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which indicates the limitation of each type of device for RF power amplifier applications.

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来源期刊

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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