2011 International Conference on Simulation of Semiconductor Processes and Devices最新文献_第4页

A compact model for early electromigration lifetime estimation 早期电迁移寿命估计的紧凑模型

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035040

R. L. de Orio, H. Ceric, S. Selberherr

引用次数: 2

Analysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport models 用不同输运模型分析Si、InAs和Si-InAs隧道二极管和隧道场效应管

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035075

A. Schenk, R. Rhyner, M. Luisier, C. Bessire

引用次数: 18

Statistical MOSFET current variation due to variation in surface roughness scattering 统计MOSFET电流的变化由于表面粗糙度散射的变化

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035022

C. Alexander, A. Asenov

引用次数: 3

The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM 现代SRAM中紧凑建模策略对SNM和读电流变异性的影响

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035024

P. Asenov, F. Adamu-Lema, S. Roy, C. Millar, A. Asenov, G. Roy, U. Kovac, D. Reid

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引用次数: 6

Parallel preconditioning for spherical harmonics expansions of the Boltzmann transport equation 玻尔兹曼输运方程球面谐波展开的平行预处理

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6034963

K. Rupp, T. Grasser, A. Jungel

引用次数: 2

A wigner function-based determinist method for the simulation of quantum transport in silicon nanowire transistors 基于wigner函数的硅纳米线晶体管量子输运模拟的确定性方法

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035053

S. Barraud, T. Poiroux, O. Faynot

引用次数: 1

Electron-phonon scattering in Si and Ge: From bulk to nanodevices 硅和锗中的电子-声子散射:从体块到纳米器件

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035046

D. Rideau, W. Zhang, Y. Niquet, C. Delerue, C. Tavernier, H. Jaouen

引用次数: 5

Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical model 间接半导体中的场诱导量子约束:量子力学和修正的半经典模型

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035077

W. Vandenberghe, B. Sorée, W. Magnus, G. Groeseneken, A. Verhulst, M. Fischetti

引用次数: 17

Fully analytic compact model of ballistic gate-all-around MOSFET with rectangular cross section 矩形截面弹道栅-全功率MOSFET的全解析紧凑模型

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035044

T. Numata, S. Uno, Y. Kamakura, N. Mori, K. Nakazato

引用次数: 3

3D TCAD simulation of advanced CMOS image sensors 先进CMOS图像传感器的三维TCAD仿真

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035082

Z. Essa, P. Boulenc, C. Tavernier, F. Hirigoyen, A. Crocherie, J. Michelot, D. Rideau

引用次数: 8