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2011 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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Physical circuit-device simulation of ESD and power devices ESD和功率器件的物理电路器件仿真
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035079
V. Axelrad, H. Hayashi, I. Kurachi
{"title":"Physical circuit-device simulation of ESD and power devices","authors":"V. Axelrad, H. Hayashi, I. Kurachi","doi":"10.1109/SISPAD.2011.6035079","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035079","url":null,"abstract":"An industrial methodology for physically accurate and efficient simulation of high-field/high-voltage events such as ESD and power applications has been presented. The methodology has been applied to a number of varied industrial problems with excellent results validated by experimental data. Our approach helps make physical simulation available to designers in cases where simulation has not been widely used previously, in particular for circuit optimization of ESD protection in logic as well as power ICs.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115311594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strong anisotropy and diameter effects on the low-field mobility of silicon nanowires 强各向异性和直径对硅纳米线低场迁移率的影响
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035042
N. Neophytou, H. Kosina
{"title":"Strong anisotropy and diameter effects on the low-field mobility of silicon nanowires","authors":"N. Neophytou, H. Kosina","doi":"10.1109/SISPAD.2011.6035042","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035042","url":null,"abstract":"We describe a method to couple the sp3d5s*-spin-orbit-coupled (SO) atomistic tight-binding (TB) model and linearized Boltzmann transport theory for the calculation of low-field mobility in Si nanowires (NWs). We consider scattering mechanisms due to phonons and surface roughness. We perform a simulation study of the low-field mobility in n-type and p-type Si NWs of diameters from 3nm to 12nm, in the [100], [110] and [111] transport orientations. We find that the NW mobility is a strong function of orientation and diameter. This is a consequence of the large variations in the electronic structure with geometry and quantization. Especially in the case of p-type [111] and [110] NWs, large phonon-limited mobility improvements with diameter scaling are observed.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122459242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
First-principles study of Si CMOS materials and nanostructures Si CMOS材料与纳米结构的第一性原理研究
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035035
K. Chang, H. Noh, Eun-Ae Choi, B. Ryu
{"title":"First-principles study of Si CMOS materials and nanostructures","authors":"K. Chang, H. Noh, Eun-Ae Choi, B. Ryu","doi":"10.1109/SISPAD.2011.6035035","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035035","url":null,"abstract":"The technology roadmap reflects that complementary metal-oxide-semiconductor field-effect transistors based on silicon will reach absolute limits on its performance within the next decade. In microelectronics, quantum effects become important and the device performance is very sensitive to defects at or close to interfaces. To improve the device operation, it is urgent to understand materials, defects, and interface properties at the atomic level. First-principles calculations, based on the density functional theory, enable us to investigate important aspects of the physics of materials and structures. We will discuss successful applications and limitations of the modern computational techniques, such as the standard generalized gradient approximation, hybrid density functional, and quasiparticle energy calculations, for the electronic and transport properties and the role of defects in Si CMOS devices with Si/high-k and metal/high-k interfaces.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128498885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs si - mosfet中量子和耗散输运的维格纳-蒙特卡罗方法
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035054
S. Koba, H. Tsuchiya, M. Ogawa
{"title":"Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs","authors":"S. Koba, H. Tsuchiya, M. Ogawa","doi":"10.1109/SISPAD.2011.6035054","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035054","url":null,"abstract":"We investigate the influences of quantum transport and scattering effects in Si double-gate MOSFETs based on Wigner Monte Carlo (WMC) approach. It is shown that quantum reflection effect makes significant differences in microscopic features of electron transport between classical and quantum approaches and can even reduce drain current at on-state, but it does not necessarily produce drastic change in macroscopic properties including the drain current. On the other hand, source-drain direct tunneling crucially degrades the subthreshold properties in scaled MOSFETs with sub-10 nm gate length. Furthermore, the ability of the WMC method to describe quantum-classical transition of carrier transport is demonstrated.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124715173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator 用于电路模拟器的soih栅极体束缚MOSFET精确全局模型
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035071
M. Mochizuki, H. Hayashi, S. Ishii, S. Ohira, I. Kurachi, N. Miura
{"title":"Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator","authors":"M. Mochizuki, H. Hayashi, S. Ishii, S. Ohira, I. Kurachi, N. Miura","doi":"10.1109/SISPAD.2011.6035071","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035071","url":null,"abstract":"Drain current of SOI H-type body-tied MOSFET can be modulated in gate length or width because of its additional gate region. It causes a serious problem especially in analog circuit design. There is, however, no model including the gate shape effect even in the newest release BSIMSOI [1]. An accurate and global model of SOI H-type body-tied MOSFET in circuit simulation has been proposed for the first time. It is confirmed that the simulation accuracy of the proposed model has greatly improved within 10% RMS error compared to the existing model.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121662852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation 用集合蒙特卡罗/分子动力学模拟研究了通道形状对载流子输运的影响
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035055
T. Kamioka, H. Imai, T. Watanabe, K. Ohmori, K. Shiraishi, Y. Kamakura
{"title":"Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation","authors":"T. Kamioka, H. Imai, T. Watanabe, K. Ohmori, K. Shiraishi, Y. Kamakura","doi":"10.1109/SISPAD.2011.6035055","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035055","url":null,"abstract":"Effect of the channel shape on the nano-scale carrier transport is studied by using the ensemble Monte-Carlo - molecular dynamics method (EMC/MD). Carrier transport in hone-shaped asymmetric channels which widen from source to drain sides is simulated by comparing that in the conventional straight channels. The obtained conductance of the horn-shaped channels is larger than that of the straight channel, as a result of the enhancement of the carrier mobility in the hone-shaped channel. This can be attributed to two reasons: the collimation effect of the asymmetric channel peculiar in the quasi-ballistic carrier transport regime, and the suppression of carrier-carrier interaction due to widening of the channel.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131226486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A mobility model correction for ‘atomistic’ drift-diffusion simulation “原子”漂移扩散模拟的迁移率模型修正
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035023
S. Amoroso, C. Alexander, S. Markov, G. Roy, A. Asenov
{"title":"A mobility model correction for ‘atomistic’ drift-diffusion simulation","authors":"S. Amoroso, C. Alexander, S. Markov, G. Roy, A. Asenov","doi":"10.1109/SISPAD.2011.6035023","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035023","url":null,"abstract":"A comprehensive statistical investigation of the increase in resistance associated with charge trapping in ‘atomistic’ simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the ‘atomistic’ simulations is proposed to suppress the error related to the fictitious charge trapping.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115240848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET 二次产生的空穴是模拟高压n-MOSFET中HC退化的重要组成部分
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035065
S. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, Jong-Mun Park, C. Jungemann
{"title":"Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET","authors":"S. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, Jong-Mun Park, C. Jungemann","doi":"10.1109/SISPAD.2011.6035065","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035065","url":null,"abstract":"We propose a physics-based model for hot-carrier degradation (HCD), which is able to represent HCD observed in n-channel high-voltage MOSFETs with different channel length with a single set of physical parameters. Our approach considers not only damage produced by channel electrons but also by secondary generated channel holes. Although the contribution of the holes to the total defect creation is smaller compared to that of electrons, their impact on the linear drain current is comparable with the electronic one. The reason behind this trend is that hole-induced traps are shifted towards the source, thereby more severely affecting the device behavior.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"290 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115907156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Critical analysis of 14nm device options 14nm器件选项的关键分析
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035034
P. Oldiges, R. Muralidhar, P. Kulkarni, C. Lin, K. Xiu, D. Guo, M. Bajaj, N. Sathaye
{"title":"Critical analysis of 14nm device options","authors":"P. Oldiges, R. Muralidhar, P. Kulkarni, C. Lin, K. Xiu, D. Guo, M. Bajaj, N. Sathaye","doi":"10.1109/SISPAD.2011.6035034","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035034","url":null,"abstract":"Modeling challenges and solutions for silicon based high performance device options at the 14nm node are presented. A variety of devices are being considered, using a variety of methods to analyze the devices objectively. Partially depleted silicon on insulator (PDSOI) devices are compared against extremely thin (ETSOI) and FinFET devices.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121971411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Efficient simulation of quantum cascade lasers using the Pauli master equation 利用泡利主方程高效模拟量子级联激光器
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035057
O. Baumgartner, Z. Stanojević, H. Kosina
{"title":"Efficient simulation of quantum cascade lasers using the Pauli master equation","authors":"O. Baumgartner, Z. Stanojević, H. Kosina","doi":"10.1109/SISPAD.2011.6035057","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035057","url":null,"abstract":"A transport model for quantum cascade lasers based on the Pauli master equation is presented. An efficient Monte Carlo solver has been developed. The numerical methods to reduce the computational cost are discussed in detail. Finally, the simulator is used to obtain current-voltage characteristics as well as microscopic quantities of a mid infrared QCL structure.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121983310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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