2011 International Conference on Simulation of Semiconductor Processes and Devices最新文献_第2页

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues 包含寄生和可靠性问题的毫米波功率GaN hemt的大信号全频带蒙特卡罗器件仿真

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035056

D. Guerra, D. Ferry, S. Goodnick, M. Saraniti, F. A. Marino

{"title":"Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues","authors":"D. Guerra, D. Ferry, S. Goodnick, M. Saraniti, F. A. Marino","doi":"10.1109/SISPAD.2011.6035056","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035056","url":null,"abstract":"We report for the first time the simulation of the large-signal dynamic load-line of high-Q matched mm-wave power amplifiers obtained through a Monte Carlo particle-based device simulator. Due to the long transient time of large reactive circuit elements, the time-domain solution of power amplifier high-Q matching networks requires prohibitive simulation time for the already time-consuming Monte Carlo technique. However, by emulating the high-Q matching network and the load impedance through an active load-line, we show that, in combination with our fast Cellular Monte Carlo algorithm, particle-based accurate device simulations of the large signal operations of AlGaN/GaN HEMTS are possible in a time-effective manner. Reliability issues and parasitic elements (such as dislocations and contact resistance) are also taken into account by, respectively, exploiting the accurate carrier dynamics description of the Monte Carlo technique and self-consistently coupling a Finite Difference Time Domain network solver with our device simulator code.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122029555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

2D analytical model for the study of NEM relay device scaling 研究NEM继电器器件定尺的二维解析模型

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035070

Xiaoying Shen, S. Chong, Daesung Lee, R. Parsa, R. Howe, H. Wong

引用次数: 6

First principles study on the switching mechanism in Resistance Random Access Memory devices 电阻随机存储器开关机制的第一性原理研究

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035088

H. Kasai, S. Aspera, H. Kishi, N. Awaya, S. Ohnishi, Y. Tamai

{"title":"First principles study on the switching mechanism in Resistance Random Access Memory devices","authors":"H. Kasai, S. Aspera, H. Kishi, N. Awaya, S. Ohnishi, Y. Tamai","doi":"10.1109/SISPAD.2011.6035088","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035088","url":null,"abstract":"The role of Resistance Random Access Memory (RRAM) is recently becoming extremely important in the field of developing non-volatile memory devices. The foreseen relevance of RRAM in this field is attributed to the switching of the electronic properties from metal to insulator, and vice versa, of the transition metal oxides (TMOs) included in RRAM by a set and reset pulse voltage. However, conclusive clarifications on the switching mechanism have not yet been fully realized. In this study, by using first principles calculation based on density functional theory, we investigated RRAM's switching mechanism through analysis of the change in the electronic properties of the bulk TMOs resulting from oxygen vacancies and charge carrier trapping for two known TMOs materials used in RRAM, HfO2 and CoO. We found that an oxygen vacancy row with charge carrier trapping creates a conduction path and therefore the transition from insulator to metal. In addition, we perform calculations for slab models of the TMOs in contact with Ta electrodes and hence investigate the effects of oxygen vacancies at the interface between the TMO layers and the electrode layer. From the obtained results, we confirmed that our investigations on activation energy barrier for oxygen vacancy migration are consistent with the experimental data of voltages required for switching.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130679459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Thermoelectromechanical simulation of GaN HEMTs GaN hemt的热机电仿真

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035062

M. Ancona, S. Binari

引用次数: 0

Modeling of enhanced 1/ƒ noise in TFT with trap charges 带陷阱电荷的TFT中增强1/ f噪声的建模

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6034969

T. Nakahagi, D. Sugiyama, S. Yukuta, M. Miyake, M. Miura-Mattausch, S. Miyano

引用次数: 9

3D modeling based on current continuity for STM carrier profiling of semiconductor devices 基于电流连续性的半导体器件STM载流子剖面三维建模

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035074

K. Fukuda, M. Nishizawa, T. Tada, L. Bolotov, Kaina Suzuki, Shigeo Sato, H. Arimoto, T. Kanayama

引用次数: 0

Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation 用微磁模拟技术研究极低能耗的电流感应磁畴壁运动

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035048

K. Kawabata, M. Tanizawa, K. Ishikawa, Y. Inoue, M. Inuishi, T. Nishimura

引用次数: 2

Low-dimensional quantum transport models in atomistic device simulations 原子器件模拟中的低维量子输运模型

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035033

G. Mil'nikov, N. Mori, Y. Kamakura

引用次数: 0

Impact of substrate bias on GIDL for thin-BOX ETSOI devices 衬底偏压对薄盒ETSOI器件GIDL的影响

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035060

P. Kulkarni, Q. Liu, A. Khakifirooz, Y. Zhang, K. Cheng, F. Monsieur, P. Oldiges

引用次数: 2

Multi scale modeling of multi phonon hole capture in the context of NBTI NBTI背景下多声子空穴捕获的多尺度模拟

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035038

F. Schanovsky, O. Baumgartner, T. Grasser

引用次数: 7