用微磁模拟技术研究极低能耗的电流感应磁畴壁运动

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035048

K. Kawabata, M. Tanizawa, K. Ishikawa, Y. Inoue, M. Inuishi, T. Nishimura

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引用次数: 2

摘要

采用LLG (Landau-Lifshitz-Gilbert)微磁模拟技术，研究了电流感应磁畴壁(DW)运动的速度和能量消耗，这是自旋电子学器件(如下一代MRAM和赛道存储器)的新模式。发现磁薄膜平面上的电流(CIP)和垂直于磁薄膜平面的电流(CPP-Perp)的DW速度几乎相同。另一方面，CPP-Perp的能耗要低得多。国际马铃薯中心。这些结果表明，CPP-Perp。结构具有高速和低能耗应用的潜在解决方案

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Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation

We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz-Gilbert) micromagnetic simulation. It is found that DW velocity is almost the same in current in magnetic thin film plane(CIP) and current perpendicular to plane (CPP-Perp.). On the other hand, the energy consumption is much lower in CPP-Perp. than CIP. These results show that the CPP-Perp. structure has potential solutions for high speed and low energy consumption applications

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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