GaN hemt的热机电仿真

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035062

M. Ancona, S. Binari

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引用次数: 0

摘要

作为研究GaN hemt可靠性关键问题的工具，我们开发了一个基于连续体公式的多维器件模拟器，其中电、机械、热和输运变量完全耦合。通过各种涉及HEMT操作和故障的例子说明了新的模拟器。

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Thermoelectromechanical simulation of GaN HEMTs

As a tool for studying the critical issue of reliability in GaN HEMTs we develop a multi-dimensional device simulator based on a continuum formulation in which the electrical, mechanical, thermal and transport variables are fully coupled. The new simulator is illustrated with various examples involving HEMT operstion and failure.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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