Modeling of enhanced 1/ƒ noise in TFT with trap charges

Abstract

We have investigates influence of existing trap states of TFT on device characteristics with use of the compact model HiSIM-TFT. Special focus is given on the 1/ƒ noise characteristics, where it is found the Vgs dependence of the 1/ƒ noise characteristics is very sensitive to the trap density distributions. We have successfully extracted high density of the shallow trap states with the measured 1/ƒ noise characteristics.