带陷阱电荷的TFT中增强1/ f噪声的建模

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6034969

T. Nakahagi, D. Sugiyama, S. Yukuta, M. Miyake, M. Miura-Mattausch, S. Miyano

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引用次数: 9

摘要

我们利用紧凑模型HiSIM-TFT研究了TFT中存在的陷阱态对器件特性的影响。特别关注了1/ f噪声特性，发现1/ f噪声特性的Vgs依赖性对陷阱密度分布非常敏感。我们成功地提取了具有测量到的1/ f噪声特性的高密度浅阱态。

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Modeling of enhanced 1/ƒ noise in TFT with trap charges

We have investigates influence of existing trap states of TFT on device characteristics with use of the compact model HiSIM-TFT. Special focus is given on the 1/ƒ noise characteristics, where it is found the Vgs dependence of the 1/ƒ noise characteristics is very sensitive to the trap density distributions. We have successfully extracted high density of the shallow trap states with the measured 1/ƒ noise characteristics.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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