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2011 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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An abnormal floating gate interference and a low program performance in 2y nm NAND flash devices 在2ynm NAND闪存器件中存在异常浮栅干扰和低程序性能
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035087
Eunmee Kwon, Dongyean Oh, Bonghoon Lee, J. Yi, Sangyong Kim, G. Cho, Sungkye Park, J. Choi
{"title":"An abnormal floating gate interference and a low program performance in 2y nm NAND flash devices","authors":"Eunmee Kwon, Dongyean Oh, Bonghoon Lee, J. Yi, Sangyong Kim, G. Cho, Sungkye Park, J. Choi","doi":"10.1109/SISPAD.2011.6035087","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035087","url":null,"abstract":"We have investigated a mechanism for an abnormally large floating gate (FG) interference reported in 2y nm NAND flash device. Based on the experimental and simulation results, we have found that the root cause is attributed to a depletion of polysilicon (poly-Si) layer for the control gate (CG). It was also found that the poly-Si depletion gives deterioration in the program performance. This work suggests that the poly-Si depletion of the CG should be controlled and considered utilizing a full 3-dimensional (3D) TCAD process and device simulations to improve the FG interference and the performance of NAND flash device beyond 2y nm technology.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"38 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132928095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impact of energetic disorder and localization on the conductivity and mobility of organic semiconductors 能量无序和局部化对有机半导体电导率和迁移率的影响
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035084
F. Torricelli, L. Colalongo, L. Milani, Z. Kovács-Vajna, E. Cantatore
{"title":"Impact of energetic disorder and localization on the conductivity and mobility of organic semiconductors","authors":"F. Torricelli, L. Colalongo, L. Milani, Z. Kovács-Vajna, E. Cantatore","doi":"10.1109/SISPAD.2011.6035084","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035084","url":null,"abstract":"The impact of the energetic disorder and the charge localization on the conductivity, mobility and carrier concentration is investigated both theoretically and experimentally. This study gives three fundamental results: (i) the magnitude of the conductivity is strongly dependent on the spatial charge localization but (ii) the conductivity as a function of temperature and Fermi level is independent on the shape of the Density of States (DOS). On the other hand (iii) the mobility is strongly influenced by the DOS, hence the DOS affect the mobility only indirectly through the charge concentration. We show that many experimental observation and theoretical investigations can be merged in a simple physical framework based on hopping and percolation. The spatial localization and energetic disorder are the key elements to reach an unified picture of the mobility of organic semiconductors.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131372667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Reliability of NAND flash memories induced by anode hole generation in floating-gate 浮栅阳极空穴产生对NAND闪存可靠性的影响
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035067
Yoshiyuki Kitahara, D. Hagishima, K. Matsuzawa
{"title":"Reliability of NAND flash memories induced by anode hole generation in floating-gate","authors":"Yoshiyuki Kitahara, D. Hagishima, K. Matsuzawa","doi":"10.1109/SISPAD.2011.6035067","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035067","url":null,"abstract":"We have developed a prediction model of program/erase endurance for NAND flash memory cell. Program/erase simulations of the life-time of the tunnel oxide based on the anode hole injection model are carried out for the NAND flash memory cell structure with various floating gate lengths. The anode hole-generation model is implemented in our device simulation and the simulation in consistent with actual circuit operation has been carried out. It is revealed that the concentration of holes at the edges of the floating gate has an impact on the life time of the tunneling oxide. The present simulation scheme has capable of estimating the dependence of the program/erase cycles to breakdown on the effect of the gate edge current in conjunction with the storage density.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115421229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology 非平衡格林函数方法作为未来CMOS技术的TCAD工具
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035058
A. Martinez, N. Seoane, M. Aldegunde, A. Asenov, J. Barker
{"title":"The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology","authors":"A. Martinez, N. Seoane, M. Aldegunde, A. Asenov, J. Barker","doi":"10.1109/SISPAD.2011.6035058","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035058","url":null,"abstract":"The potential of the Non-equilibrium Green function formalism as a new TCAD tool is demonstrated with concrete examples. We revise ballistic simulations of variability associated with discrete dopants and SiO2/Si interface roughness of silicon gate-all-around nanowire transistors. Phonon limited mobility in various nanowire cross-sections are calculated from the current-voltage characteristics, showing an agreement with previous calculations using different models. Using the same electron-phonon parameters, statistical simulations combining discrete dopants and surface roughness are carried out for a nanowire transistor. The use of renormalized physics in the formalism is highlighted. The majority of results use a coupled-mode-space representation in concomitance with a recursive algorithm to deliver fast and accurate results, even with the inclusion of dissipative physics.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123998622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Coupling the level set method with an electrothermal solver to simulate GST based PCM cells 耦合水平集方法与电热求解器模拟基于GST的PCM细胞
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035050
A. Glière, O. Cueto, J. Hazart
{"title":"Coupling the level set method with an electrothermal solver to simulate GST based PCM cells","authors":"A. Glière, O. Cueto, J. Hazart","doi":"10.1109/SISPAD.2011.6035050","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035050","url":null,"abstract":"The Level Set Method and a GST thermodynamic model are coupled to an electrothermal solver to simulate GST based PCM cells. A good qualitative agreement with published results is obtained in the cell amorphization simulation and the ability of our method to simulate crystallization is demonstrated.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122980258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Nanosized metal grains induced electrical characteristic fluctuation in 16 nm bulk and SOI FinFET devices with TiN/HfO2 gate stack 采用TiN/HfO2栅极堆叠的16 nm块体和SOI FinFET器件中，纳米尺寸金属颗粒诱导电特性波动
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035025
Hui-Wen Cheng, Yiming Li, C. Yiu, Hsin-Wen Su
{"title":"Nanosized metal grains induced electrical characteristic fluctuation in 16 nm bulk and SOI FinFET devices with TiN/HfO2 gate stack","authors":"Hui-Wen Cheng, Yiming Li, C. Yiu, Hsin-Wen Su","doi":"10.1109/SISPAD.2011.6035025","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035025","url":null,"abstract":"In this study, the work function fluctuation (WKF) induced device variability in 16-nm-gate bulk and SOI FinFETs is for the first time explored by using an experimentally calibrated three-dimensional (3D) device simulation. Random nanosized grains of TiN gate are statistically positioned in the gate region of device to examine the associated electrostatic and carriers' transport properties, concurrently capturing random grain's size, number and position fluctuations. Both bulk and SOI FinFETs with TiN/HfO2 gate stack are simulated, based upon experimentally available data. The approach of localized WKF simulation method is thus intensively performed to explore the device's variability including comparison between bulk and SOI FinFETs. The results of this study enable us to get an even reasonably accurate account of the random grain's number, position and size effects.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122480849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Adaptive variable-order spherical harmonics expansion of the Boltzmann Transport Equation 玻尔兹曼输运方程的自适应变阶球谐展开
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6034964
K. Rupp, T. Grasser, A. Jungel
{"title":"Adaptive variable-order spherical harmonics expansion of the Boltzmann Transport Equation","authors":"K. Rupp, T. Grasser, A. Jungel","doi":"10.1109/SISPAD.2011.6034964","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6034964","url":null,"abstract":"The spherical harmonics expansion method provides a deterministic solution method for the Boltzmann Transport Equation for semiconductors. While first-order expansions have been used in early works, higher-order expansions are required for modern scaled-down devices. The drawback of higher-order expansion is that the number of unknowns in the resulting system of equations increases quadratically with the expansion order, leading to high memory consumptions and long simulation times. In this work we show that a considerable number of unknowns can be saved by increasing the expansion order only locally in the simulation domain. Moreover, we propose a scheme that adaptively increases the order starting from a uniform first-order expansion. For the considered n+nn+-diode, savings in the number of unknowns of up to a factor of five are obtained without sacrificing any accuracy of the numerical solution.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127276221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Quantum electronic trap-to-band transitions in chalcogenides induced by electron-electron interaction 电子-电子相互作用诱导硫族化合物中量子电子阱-带跃迁
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035051
F. Buscemi, E. Piccinini, F. Giovanardi, M. Rudan, R. Brunetti, C. Jacoboni
{"title":"Quantum electronic trap-to-band transitions in chalcogenides induced by electron-electron interaction","authors":"F. Buscemi, E. Piccinini, F. Giovanardi, M. Rudan, R. Brunetti, C. Jacoboni","doi":"10.1109/SISPAD.2011.6035051","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035051","url":null,"abstract":"Charge transport in amorphous-chalcogenide materials used for manufacturing memory devices is determined by two mechanisms: hopping of trapped electrons and motion of band electrons. Electron-electron interaction is investigated here as one of the mechanisms mainly responsible for the trap-to-band transitions. The problem is tackled using a fully quantum-mechanical approach by numerically solving the two-particle, time-dependent Schrödinger equation. The results show that the detrapping probability increases with the current density, this supporting the interpretation by which successive electron-electron scattering events may play a major role in the determining the snap-back of the I(V) characteristic in this kind of materials.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115294434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
a-Si/c-Si1−xGex/c-Si heterojunction solar cells a-Si/c-Si1−xGex/c-Si异质结太阳能电池
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-09-01 DOI: 10.1109/SISPAD.2011.6035083
S. Abdul Hadi, A. Nayfeh, P. Hashemi, J. Hoyt
{"title":"a-Si/c-Si1−xGex/c-Si heterojunction solar cells","authors":"S. Abdul Hadi, A. Nayfeh, P. Hashemi, J. Hoyt","doi":"10.1109/SISPAD.2011.6035083","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035083","url":null,"abstract":"The performance and material quality requirements of thin film a-Si/c-Si<sub>1-x</sub>Ge<sub>x</sub>/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si<sub>1-x</sub>Ge<sub>x</sub> thickness, Si<sub>1-x</sub>Ge<sub>x</sub> lifetime and a-Si/c-Si<sub>1-x</sub>Ge<sub>x</sub> interfacial quality have been studied. The simulations predict that Si<sub>1-x</sub>Ge<sub>x</sub> based thin film solar cells provide a significant increase in solar cell output current for Ge fractions larger than 30%, due to the narrower band-gap and increased absorption. In addition, the efficiency of thin (2μm) Si<sub>1-x</sub>Ge<sub>x</sub> solar cells surpasses that of Si for minority carrier lifetimes larger than 0.5μs. For these 2μm thin layers, simulations predict reduced material quality requirements for Si<sub>1-x</sub>Ge<sub>x</sub> cells, with a clear performance advantage relative to Si based solar cells.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126725753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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