Reliability of NAND flash memories induced by anode hole generation in floating-gate

Abstract

We have developed a prediction model of program/erase endurance for NAND flash memory cell. Program/erase simulations of the life-time of the tunnel oxide based on the anode hole injection model are carried out for the NAND flash memory cell structure with various floating gate lengths. The anode hole-generation model is implemented in our device simulation and the simulation in consistent with actual circuit operation has been carried out. It is revealed that the concentration of holes at the edges of the floating gate has an impact on the life time of the tunneling oxide. The present simulation scheme has capable of estimating the dependence of the program/erase cycles to breakdown on the effect of the gate edge current in conjunction with the storage density.