An abnormal floating gate interference and a low program performance in 2y nm NAND flash devices

Eunmee Kwon, Dongyean Oh, Bonghoon Lee, J. Yi, Sangyong Kim, G. Cho, Sungkye Park, J. Choi
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引用次数: 3

Abstract

We have investigated a mechanism for an abnormally large floating gate (FG) interference reported in 2y nm NAND flash device. Based on the experimental and simulation results, we have found that the root cause is attributed to a depletion of polysilicon (poly-Si) layer for the control gate (CG). It was also found that the poly-Si depletion gives deterioration in the program performance. This work suggests that the poly-Si depletion of the CG should be controlled and considered utilizing a full 3-dimensional (3D) TCAD process and device simulations to improve the FG interference and the performance of NAND flash device beyond 2y nm technology.
在2ynm NAND闪存器件中存在异常浮栅干扰和低程序性能
我们研究了2ynm NAND闪存器件中异常大浮栅(FG)干扰的机制。根据实验和仿真结果,我们发现根本原因是控制栅(CG)的多晶硅(poly-Si)层耗尽。还发现多晶硅耗尽会导致程序性能下降。这项工作表明,应该控制并考虑利用完整的三维(3D) TCAD工艺和器件模拟来改善FG干扰和NAND闪存器件超过2y nm技术的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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