The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology

Abstract

The potential of the Non-equilibrium Green function formalism as a new TCAD tool is demonstrated with concrete examples. We revise ballistic simulations of variability associated with discrete dopants and SiO2/Si interface roughness of silicon gate-all-around nanowire transistors. Phonon limited mobility in various nanowire cross-sections are calculated from the current-voltage characteristics, showing an agreement with previous calculations using different models. Using the same electron-phonon parameters, statistical simulations combining discrete dopants and surface roughness are carried out for a nanowire transistor. The use of renormalized physics in the formalism is highlighted. The majority of results use a coupled-mode-space representation in concomitance with a recursive algorithm to deliver fast and accurate results, even with the inclusion of dissipative physics.