“原子”漂移扩散模拟的迁移率模型修正

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035023

S. Amoroso, C. Alexander, S. Markov, G. Roy, A. Asenov

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引用次数: 3

摘要

考虑到经典和量子形式的大范围掺杂密度和网格间距，对“原子”模拟中与电荷捕获相关的电阻增加进行了全面的统计研究。提出了一种用于“原子”模拟的修正迁移率模型，以抑制与虚拟电荷捕获有关的误差。

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A mobility model correction for ‘atomistic’ drift-diffusion simulation

A comprehensive statistical investigation of the increase in resistance associated with charge trapping in ‘atomistic’ simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the ‘atomistic’ simulations is proposed to suppress the error related to the fictitious charge trapping.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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