用于电路模拟器的soih栅极体束缚MOSFET精确全局模型

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035071

M. Mochizuki, H. Hayashi, S. Ishii, S. Ohira, I. Kurachi, N. Miura

{"title":"用于电路模拟器的soih栅极体束缚MOSFET精确全局模型","authors":"M. Mochizuki, H. Hayashi, S. Ishii, S. Ohira, I. Kurachi, N. Miura","doi":"10.1109/SISPAD.2011.6035071","DOIUrl":null,"url":null,"abstract":"Drain current of SOI H-type body-tied MOSFET can be modulated in gate length or width because of its additional gate region. It causes a serious problem especially in analog circuit design. There is, however, no model including the gate shape effect even in the newest release BSIMSOI [1]. An accurate and global model of SOI H-type body-tied MOSFET in circuit simulation has been proposed for the first time. It is confirmed that the simulation accuracy of the proposed model has greatly improved within 10% RMS error compared to the existing model.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"237 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator\",\"authors\":\"M. Mochizuki, H. Hayashi, S. Ishii, S. Ohira, I. Kurachi, N. Miura\",\"doi\":\"10.1109/SISPAD.2011.6035071\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Drain current of SOI H-type body-tied MOSFET can be modulated in gate length or width because of its additional gate region. It causes a serious problem especially in analog circuit design. There is, however, no model including the gate shape effect even in the newest release BSIMSOI [1]. An accurate and global model of SOI H-type body-tied MOSFET in circuit simulation has been proposed for the first time. It is confirmed that the simulation accuracy of the proposed model has greatly improved within 10% RMS error compared to the existing model.\",\"PeriodicalId\":264913,\"journal\":{\"name\":\"2011 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"237 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2011.6035071\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2011.6035071","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

SOI h型体系MOSFET的漏极电流可以在栅极长度或宽度上进行调制，因为它具有额外的栅极区。这在模拟电路设计中引起了严重的问题。然而，即使在最新发布的BSIMSOI[1]中，也没有包含栅极形状效应的模型。首次在电路仿真中提出了一种精确的、全局的SOI h型体系MOSFET模型。结果表明，与现有模型相比，所提模型的仿真精度在10%的RMS误差范围内有较大提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator

Drain current of SOI H-type body-tied MOSFET can be modulated in gate length or width because of its additional gate region. It causes a serious problem especially in analog circuit design. There is, however, no model including the gate shape effect even in the newest release BSIMSOI [1]. An accurate and global model of SOI H-type body-tied MOSFET in circuit simulation has been proposed for the first time. It is confirmed that the simulation accuracy of the proposed model has greatly improved within 10% RMS error compared to the existing model.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2011 International Conference on Simulation of Semiconductor Processes and Devices

自引率

0.00%

发文量